MA4AGSW1A_V5 MA-COM [M/A-COM Technology Solutions, Inc.], MA4AGSW1A_V5 Datasheet

MA4AGSW1A_V5

Manufacturer Part Number

MA4AGSW1A_V5

Description

SPST Non-Reflective AlGaAs PIN Diode Switch

Manufacturer

MA-COM [M/A-COM Technology Solutions, Inc.]

Datasheet

1.MA4AGSW1A_V5.pdf (7 pages)

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FEATURES

♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz

♦ Functional Bandwidth : 50 MHz to 70 GHz

♦ 0.5 dB Insertion Loss at 50GHz

♦ 46 dB Isolation at 50 GHz

♦ Low Current consumption.

♦ Silicon Nitride Passivation

♦ Polymer Scratch protection

♦ RoHS Compliant

M/A-COM’s, MA4AGSW1A is an Aluminum-Gallium-

Arsenide, single pole, single throw (SPST), absorptive

PIN diode switch. The switch features enhanced AlGaAs

anodes which are formed using M/A-COM’s patented

hetero-junction technology. AlGaAs technology produces

a switch with less loss than a device fabricated using

conventional GaAs processes. As much as a 0.3dB

reduction in insertion loss can be realized at 50GHz. This

device is fabricated on an OMCVD epitaxial wafer using

a process designed for high device uniformity and

extremely low parasitics. The PIN diodes within the chip

exhibit low series resistance, low capacitance, and fast

switching speed. They are fully passivated with silicon

nitride and have an additional polymer layer for scratch

protection. The protective coating prevents damage

during handling and assembly to the diode junction as

well as the anode air-bridges . Off chip bias circuitry will

be required.

The output port of this device, J2, is terminated into 50Ω

during isolation mode, which allows this signal to be

absorbed rather than reflected back. This functionality

makes it ideal for instrumentation and radar applications.

An absorptive switch can be added to other AlGaAs

reflective switches to improve isolation VSWR and

increase isolation magnitude. The ultra low capacitance

of the PIN diodes makes it ideal for usage in low loss and

high isolation microwave and millimeter wave switch

designs through 70 GHz. The lower series resistance of

the AlGaAs diodes reduces the total insertion loss and

distortion of the device. AlGaAs PIN switches are used in

applications such as switching arrays for radar systems,

radiometers, and other multi-function components.

SPST Non-Reflective AlGaAs PIN Diode Switch

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

MA4AGSW1A

• -10mA /1.35V for low loss state

•+10mA /1.35V for Isolation state

APPLICATIONS

DESCRIPTION

Maximum combined operating conditions for RF Power, D.C. bias,

and temperature: +23 dBm C.W. @ 10 mA (per diode) @ +85°C.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

Absolute Maximum Ratings @ T

Visit www.macomtech.com for additional data sheets and product information.

Incident C.W. RF Power

Operating Temperature

Assembly Temperature

Junction Temperature

Storage Temperature

Breakdown Voltage

Yellow areas indicate bond pads

Bias Current

Parameter

• China Tel: +86.21.2407.1588

Maximum Rating

+300°C < 10 sec

-55°C to +125°C

-55°C to +150°C

+23dBm C.W.

± 25mA

+175°C

AMB

25V

= +25°C

Related parts for MA4AGSW1A_V5

MA4AGSW1A_V5 Summary of contents

Page 1

MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch FEATURES ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz ♦ Functional Bandwidth : 50 MHz to 70 GHz ♦ 0.5 dB Insertion Loss at 50GHz ♦ Isolation at 50 GHz ...

Page 2

MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch Parameter Insertion Loss Isolation Input return Loss J1- J2 (Terminated by 50Ω) Output Return Loss J2- J1 (Terminated by 50Ω) (Insertion loss)) Output Return Loss (Isolation) Switching Speed (10% - 90% RF Voltage) ...

Page 3

MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch Typical RF Performance (Probed on Wafer) Isol (dB) Loss (dB) 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated ...

Page 4

MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch Typical RF Performance (Probed on wafer) Output Return Loss (Insertion Loss State) Loss (dB) Output Return Loss (Isolation Loss State) Loss (dB) 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology ...

Page 5

MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch Operation of the MA4AGSW1A Switch An external bias network and D.C return is required for successful operation of the MA4AGSW1A absorptive SPST AlGaAs PIN diode switch. The backside area of the die is ...

Page 6

MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch Chip Dimensions and Bonding Pad Locations (In Yellow) Dimension Thickness Bond Pads J1 & J2 Bond Pad B 6 ADVANCED: Data Sheets contain information regarding ...

Page 7

MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch CLEANLINESS These chips should be handled in a clean environment. STATIC SENSITIVITY These Devices are considered ESD Class 1A, HBM. Proper ESD techniques should be used when handling these devices. GENERAL HANDLING The ...

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