FLL810IQ-4C EUDYNA [Eudyna Devices Inc], FLL810IQ-4C Datasheet
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FLL810IQ-4C
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FLL810IQ-4C Summary of contents
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... Suitable for class AB operation. • Hermetically Sealed Package DESCRIPTION The FLL810IQ- Watt GaAs FET that employs a push-pull design which offers excellent linearity, ease of matching, and greater consistency in covering the frequency band of 3.5 to 3.7 GHz. This new product is uniquely suited for use in WLL applications as it offers high gain, long term reliability and ease of use ...
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... FLL810IQ-4C L-Band High Power GaAs FET OUTPUT POWER vs. FREQUENCY 12V, I DS(DC 3.45 3.50 3.55 3.60 3.65 Frequency (GHz) IMD & IDS(RF) vs. TOTAL OUTPUT POWER 12V, -24 I DS(DC 3.6GHz, -28 43dBm f1 = 3.61GHz -32 38dBm -36 34dBm -40 -44 30dBm -48 -52 26dBm -56 - 3.70 3.75 OUTPUT POWER & add vs. INPUT POWER ...
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... Download S-Parameters, click here 3 FLL810IQ-4C S22 MAG ANG .796 152.9 .773 151.8 .752 150.1 .729 149.5 .714 148.0 .678 146.2 .656 143.9 .604 140.8 .566 138.8 .506 137.6 .468 143 ...
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... FLL810IQ-4C L-Band High Power GaAs FET 6 4-R1.3±0.2 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...