km6161002a Samsung Semiconductor, Inc., km6161002a Datasheet - Page 6

• Manufacturer Part Number: km6161002a
• Description: 64kx16 Bit High Speed Static Ram 5v Operating , Revolutionary Pin Out. Operated At Commercial And Industrial Temperature Range.
• Manufacturer: Samsung Semiconductor, Inc.

KM6161002A, KM6161002AI
TIMING WAVEFORM OF READ CYCLE(2)
TIMING WAVEFORM OF WRITE CYCLE(1)
Address
CS
UB, LB
OE
Data out
Address
OE
CS
UB, LB
WE
Data in
Data out
NOTES(READCYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. t
4. At any given temperature and voltage condition, t
5. Transition is measured 200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=V
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
levels.
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V
High-Z
High-Z
t
t
t
BLZ(4,5)
LZ(4,5)
AS(4)
(WE=V
(OE Clock)
t
OLZ
IL.
IH
t
AA
)
t
CO
HZ
t
t
- 6 -
OHZ(6)
t
BA
OE
(Max.) is less than t
t
t
AW
t
t
WC
CW(3)
RC
t
BW
t
WP(2)
LZ
(Min.) both for a given device and from device to device.
t
Valid Data
DW
Valid Data
t
WR(5)
t
DH
CMOS SRAM
t
t
OH
t
t
OHZ
BHZ(3,4,5)
HZ(3,4,5)
PRELIMINARY
High-Z
February 1998
OH
Rev 4.0
or V
OL