km6161002a Samsung Semiconductor, Inc., km6161002a Datasheet - Page 8

• Manufacturer Part Number: km6161002a
• Description: 64kx16 Bit High Speed Static Ram 5v Operating , Revolutionary Pin Out. Operated At Commercial And Industrial Temperature Range.
• Manufacturer: Samsung Semiconductor, Inc.

KM6161002A, KM6161002AI
FUNCTIONAL DESCRIPTION
* NOTE : X means Don t Care.
TIMING WAVEFORM OF WRITE CYCLE(4)
CS
H
L
L
L
L
Data in
Data out
Address
CS
UB, LB
WE
WE
H
H
X
X
L
NOTES(WRITE CYCLE)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low CS,WE,LB and UB. A write begins at the latest transition CS going low and WE
3. t
4. AS is measured from the address valid to the beginning of write.
5. tWR is measured from the end of write to the address change. t
6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.
9. Dout is the read data of the new address.
10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
going low ; A write ends at the earliest transition CS going high or WE going high. tWP is measured from the beginning of write
to the end of write.
of the output must not be applied because bus contention can occur.
applied.
CW
is measured from the later of CS going low to end of write.
OE
X*
H
X
X
L
High-Z
High-Z
LB
X
X
H
H
H
L
L
L
L
UB
X
X
H
H
H
L
L
L
L
t
AS(4)
(UB, LB Controlled)
t
Output Disable
BLZ
Not Select
Mode
Read
Write
- 8 -
t
WHZ(6)
t
AW
t
CW(3)
t
WC
t
BW
t
WR
WP(2)
I/O
applied in case a write ends as CS or WE going high.
High-Z
High-Z
High-Z
High-Z
D
D
D
D
1
OUT
OUT
~I/O
IN
IN
t
DW
Valid Data
8
I/O Pin
t
WR(5)
I/O
t
High-Z
High-Z
High-Z
High-Z
DH
D
D
9
D
D
~I/O
OUT
OUT
IN
IN
High-Z(8)
16
CMOS SRAM
PRELIMINARY
Supply Current
February 1998
I
SB
I
I
I
, I
CC
CC
CC
SB1
Rev 4.0