SG35N12T SIRECTIFIER [Sirectifier Semiconductors], SG35N12T Datasheet - Page 2

• Manufacturer Part Number: SG35N12T
• Description: Discrete IGBTs
• Manufacturer: SIRECTIFIER [Sirectifier Semiconductors]

Reverse Diode (FRED)
Symbol
Symbol
R
R
C
t
C
R
C
t
t
t
Q
Q
E
E
E
I
d(off)
d(on)
d(on)
d(off)
thCK
g
Q
thJC
V
RM
oes
t
t
t
t
t
thJC
ies
res
off
on
off
ge
gc
ts
ri
fi
ri
fi
rr
F
g
I
Pulse test, t 300us, duty cycle 2%
V
I
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
I
V
L
I
C
C
C
C
F
F
CE
CE
CE
R
=I
=I
=I
=I
=30A; T
=1A; -di/dt=100A/us; V
=540V; I
C90
=25V; V
C90
C90
=0.8V
C90
=0.8V
0.05uH; T
CE
CE
; V
; V
; V
; V
(Clamp)
(Clamp)
T
CE
GE
GE
GE
CES'
CES'
VJ
VJ
SG35N12T, SG35N12DT
F
=150
=10V
=15V; V
=15V;
=15V;
=25
GE
G
G
=30A; -di
; R
; R
VJ
=0V; f=1MHz
o
=100
G
G
C
J
J
o
=25
=R
=125
=R
Test Conditions
Test Conditions
C
0.8V
0.8V
CE
off
off
o
o
F
C
=0.5V
C
=5
=5
/dt=240A/us
o
CES'
CES'
C
R
=30V; T
higher T
higher T
CES
Discrete IGBTs
VJ
=25
J
J
or
or
o
C
min.
min.
30
Characteristic Values
Characteristic Values
(T
(T
J
J
=25
=25
o
o
4620
260
C , unless otherwise specified)
170
0.25
C , unless otherwise specified)
typ.
180
160
300
360
typ.
3.8
90
2.6
16
40
57
50
27
55
31
8.0
28
40
max.
max.
0.42
2.55
280
320
2.2
7.3
18
0.9
60
K/W
K/W
K/W
Unit
Unit
mJ
mJ
mJ
nC
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
A