MRF282S MOTOROLA [Motorola, Inc], MRF282S Datasheet

no-image

MRF282S

Manufacturer Part Number
MRF282S
Description
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF282S
Manufacturer:
MOT
Quantity:
226
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier
amplifier applications.
REV 1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T C = 25 C
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Source Leakage Current
Designed for class A and class AB PCN and PCS base station applications at
Motorola, Inc. 1997
Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Specified Single–Tone Performance @ 2000 MHz, 26 Volts
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts (CW) Output Power
Gold Metallization for Improved Reliability
Derate above 25 C
(V GS = 0, I D = 10 Adc)
(V DS = 28 Vdc, V GS = 0)
(V GS = 20 Vdc, V DS = 0)
Intermodulation Distortion = –30 dBc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power = 10 Watts (PEP)
Power Gain = 11 dB
Efficiency = 30%
Output Power = 10 Watts (CW)
Power Gain = 11 dB
Efficiency = 40%
Characteristic
Characteristic
Rating
(T C = 25 C unless otherwise noted)
V (BR)DSS
Symbol
I DSS
I GSS
Symbol
Symbol
V DSS
R JC
V GS
T stg
Min
P D
T J
65
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 458A–01, STYLE 1
10 W, 2000 MHz, 26 V
MRF282S
MRF282Z
CASE 458–03, STYLE 1
Typ
– 65 to +150
BROADBAND
(MRF282S)
(MRF282Z)
Value
0.34
Max
200
2.9
65
60
20
MRF282S MRF282Z
Order this document
Max
1.0
1.0
by MRF282/D
Watts
W/ C
Unit
Unit
Unit
Vdc
Vdc
Vdc
C/W
Adc
Adc
C
C
1

Related parts for MRF282S

MRF282S Summary of contents

Page 1

... V DSS 0.34 T stg – +150 T J 200 Symbol Max R JC 2.9 Symbol Min Typ Max V (BR)DSS 65 — — I DSS — — 1.0 I GSS — — 1.0 MRF282S MRF282Z by MRF282/D Unit Vdc Vdc Watts Unit C/W Unit Vdc Adc Adc 1 ...

Page 2

... Drain Efficiency ( Vdc, P out = 2000.0 MHz) Output Mismatch Stress ( Vdc, P out = 2000.0 MHz 2000.1 MHz, Load VSWR = 10:1, All Phase Angles at Frequency of Test) MRF282S MRF282Z unless otherwise noted) Symbol Min V GS(th) 2 ...

Page 3

... C15 R6 C17 Z8 Z9 Z10 RF OUTPUT C13 C16 0.2 W Chip Resistor, Rohm 0.155 x 0.08 Microstrip 0.280 x 0.08 Microstrip 0.855 x 0.08 Microstrip 0.483 x 0.08 Microstrip 0.200 x 0.330 Microstrip 0.220 x 0.330 Microstrip 0.490 x 0.330 Microstrip 0.510 x 0.08 Microstrip 0.990 x 0.08 Microstrip 0.295 x 0.08 Microstrip 35 Mils Glass Teflon , Arlon GX–300 2.55 MRF282S MRF282Z 3 ...

Page 4

... Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.053 Long, 6 Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.091 Long L3 Turns, 26 AWG, 0.080 OD, 0.046 ID, 0.170 Long, 30 Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.078 Long Figure 2. Schematic of 1.81 – 1.88 GHz Broadband Test Circuit MRF282S MRF282Z C14 C11 L3 DUT Z8 ...

Page 5

... W Chip Resistor, Rohm 0.624 x 0.08 Microstrip 0.725 x 0.08 Microstrip 0.455 x 0.08 Microstrip 0.530 x 0.330 Microstrip 0.280 x 0.330 Microstrip 0.212 x 0.330 Microstrip 0.408 x 0.08 Microstrip 0.990 x 0.08 Microstrip 0.295 x 0.08 Microstrip 35 Mils Glass Teflon , Arlon GX–0300 2.55 Type N Flange Mount RF55–22, Connectors, Omni Spectra MRF282S MRF282Z OUTPUT 5 ...

Page 6

... MHz 2000.1 MHz – – 100 mA – 125 mA – – 60 0.1 1.0 P out , OUTPUT POWER (WATTS) PEP Figure 8. Intermodulation Distortion versus Output Power MRF282S MRF282Z 6 TYPICAL CHARACTERISTICS out 0 0 ...

Page 7

... Figure 13. Performance in Broadband Circuit 50 100 150 200 JUNCTION TEMPERATURE ( C) 10% of the theoretical prediction for metal failure. Divide MTBF Figure 14. MTBF Factor versus Junction Temperature C iss C oss C rss 1.6:1 36 1.4:1 VSWR 35 1.2:1 1970 1990 2000 1960 1980 250 MRF282S MRF282Z 7 ...

Page 8

... GHz 0.2 0.0 – j0.2 – j0 (1)= Conjugate of fixture gate terminal impedance Conjugate of the optimum load impedance at Figure 15. Series Equivalent Input and Output Impedence MRF282S MRF282Z GHz GHz 0 1.8 GHz – mA, P out = 10 W (PEP) ...

Page 9

... MRF282S MRF282Z 9 ...

Page 10

... MRF282S MRF282Z 10 PACKAGE DIMENSIONS CASE 458–03 ISSUE C (MRF282S CASE 458A–01 ISSUE O (MRF282Z) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14 ...

Page 11

... Motorola, Inc. Motorola, Inc Equal Mfax is a trademark of Motorola, Inc. JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, MRF282S MRF282Z MRF282/D 11 ...

Related keywords