IRHSLNA53064 IRF [International Rectifier], IRHSLNA53064 Datasheet

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IRHSLNA53064

Manufacturer Part Number
IRHSLNA53064
Description
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2)
Manufacturer
IRF [International Rectifier]
Datasheet
Product Summary
IRHSLNA57064 100K Rads (Si)
IRHSLNA53064 300K Rads (Si)
IRHSLNA54064 600K Rads (Si)
IRHSLNA58064 1000K Rads (Si) 7.1m
Absolute Maximum Ratings
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
* Current is limited by package
For footnotes refer to the last page
I D @ V GS = 12V, T C = 25°C
I D @ V GS = 12V, T C = 100°C Continuous Drain or Source Current
www.irf.com
Part Number
I F (AV)@ T C = 25°C
I F (AV)@ T C =100°C
P D @ T C = 25°C
T J, T STG
V GS
E AR
E AS
I DM
I AR
Radiation Level
Parameter
Continuous Drain or Source Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Schottky and Body Diode Avg. Forward Current
Schottky and Body Diode Avg. Forward Current
Opeating and Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
R
6.1m
6.1m
6.1m
DS(on)
160nC
160nC
160nC
160nC
Q
G
Features:
n
n
n
n
n
n
Co-Pack N-channel RAD-Hard MOSFET
Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
Refer to IRHSNA57064 for Lower
and Schottky Diode
SMD-2
IRHSLNA57064
60V, N-CHANNEL
-55 to 150
3.3 (Typical)
300 (for 5s)
300
250
±20
370
2.0
75*
75
25
75*
75*
75*
Pre-Irradiation
PD-94401A
R
DS(on)
Units
W/°C
mJ
mJ
°C
A
W
V
A
A
g
08/07/02
1

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IRHSLNA53064 Summary of contents

Page 1

... SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHSLNA57064 100K Rads (Si) IRHSLNA53064 300K Rads (Si) IRHSLNA54064 600K Rads (Si) IRHSLNA58064 1000K Rads (Si) 7.1m Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications ...

Page 2

IRHSLNA57064 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage ...

Page 3

... On-State Resistance (SMD-2) V Diode Forward Voltage SD 1. Part numbers IRHSLNA57064, IRHSLNA53064 and IRHSLNA54064 2. Part number IRHSLNA58064 International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area ...

Page 4

IRHSLNA57064  1000 VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 10 5.0V  20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...

Page 5

Pre-Irradiation Charge Fig 5a. Basic Gate Charge Waveform www.irf.com  I = 45A 48V 30V DS V ...

Page 6

IRHSLNA57064 200  L IMITED BY PACKAGE 150 100 100 T , Case Temperature ( C) C Fig 6. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05  0.02 ...

Page 7

Pre-Irradiation 800 600 400 200 0 25 Fig 9. Maximum Avalanche Energy D 0. Fig 9a. Unclamped Inductive Test Circuit www.irf.com  ...

Page 8

IRHSLNA57064 MOSFET Body Diode & Schottky Diode Characteristics 100 Fig Typical Forward Voltage Drop Characterstics 0.50 0.20 0.1 0.10 0.05 0.02  SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig 11. Maximum Effective ...

Page 9

Pre-Irradiation Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature Pulse width 300 s; Duty Cycle 2% 50% Duty Cycle, Rectangular 25V, starting 25°C, L= 0.13 mH Peak 75A, V ...

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