IRHSLNA53064 IRF [International Rectifier], IRHSLNA53064 Datasheet - Page 3

• Manufacturer Part Number: IRHSLNA53064
• Description: RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2)
• Manufacturer: IRF [International Rectifier]

Table 2. Single Event Effect Safe Operating Area
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test condi-
tions in order to provide a direct comparison.
For footnotes refer to the last page
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
1. Part numbers IRHSLNA57064, IRHSLNA53064 and IRHSLNA54064
2. Part number IRHSLNA58064
International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Radiation Characteristics
www.irf.com
BV
V
I
I
I
R
R
V
GSS
GSS
DSS
Ion
Kr
Xe
Au
GS(th)
SD
DS(on)
DS(on)
DSS
MeV/(mg/cm
Drain-to-Source Breakdown Voltage
LET
39.2
63.3
86.6
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
Diode Forward Voltage
Parameter
2
))
Energy
(MeV)
2068
300
300
Fig a. Single Event Effect, Safe Operating Area
70
60
50
40
30
20
10
0
0
Range
(µm)
106
37.4
29.2
@V
-5
Up to 600K Rads(Si)
GS
60
46
35
Min
=0V @V
2.0
60
—
—
—
—
—
—
VGS
-10
-100
Max
100
6.1
GS
4.0
6.1
1.3
10
—
35
60
46
=-5V @V
-15
1
1000K Rads (Si)
Min
1.5
—
—
—
—
—
—
60
V
GS
DS
=-10V @V
60
35
27
-20
-100
(V)
Max
7.1
100
—
7.1
1.3
4.0
25
2
Units
µA
m
m
V
V
nA
GS
Kr
Xe
Au
52
25
20
=-15V @V
V
V
GS
GS
Test Conditions
V
V
V
V
GS
DS
GS
GS
IRHSLNA57064
= V
= 0V, I
V
V
=48V, V
GS
GS
= 12V, I
= 0V, I S = 45A
= 12V, I
GS
DS
34
15
= 20V
= -20 V
14
=-20V
, I
D
D
= 1.0mA
GS
D
= 1.0mA
D
=45A
=45A
=0V
3