MRF8S18210WGHSR3 FREESCALE [Freescale Semiconductor, Inc], MRF8S18210WGHSR3 Datasheet - Page 5

• Manufacturer Part Number: MRF8S18210WGHSR3
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor, Inc.
18.5
17.5
16.5
19
18
17
16
Figure 3. Output Peak- -to- -Average Ratio Compression (PARC)
18.4
18.2
17.8
17.6
17.4
17.2
16.8
16.4
16.6
--70
--20
--30
--40
--50
--60
18
17
--1
--2
--3
--4
--5
--6
0
1880
10
1
Broadband Performance @ P
--1 dB = 25 W
V
I
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
Figure 4. Intermodulation Distortion Products
DQ
DD
V
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
Compression (PARC) versus Output Power
DD
= 1300 mA
Figure 5. Output Peak- -to- -Average Ratio
1900
= 30 Vdc, P
= 30 Vdc, P
TYPICAL CHARACTERISTICS
V
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
30
DD
1920
versus Two- -Tone Spacing
= 30 Vdc, I
--3 dB = 48 W
out
P
out
PARC
TWO--TONE SPACING (MHz)
out
= 80 W (PEP)
IM5--L
IM5--L
IM5--U
, OUTPUT POWER (WATTS)
= 50 W (Avg.), I
--2 dB = 35 W
1940
f, FREQUENCY (MHz)
10
G
50
ACPR
DQ
ps
η
= 1300 mA, f = 1960 MHz
D
IM3--U
1960
IM7--U
IM3--L
DQ
70
1980
= 1300 mA
out
IM7--L
= 50 Watts Avg.
2000
IRL
ACPR
PARC
90
100
MRF8S18210WHSR3 MRF8S18210WGHSR3
η
2020
D
G
ps
2040
110
300
32
30
28
26
--31
--32
--33
--34
--35
--36
--37
70
60
50
40
30
20
10
--20
--25
--30
--35
--40
--45
--50
0
--10
--20
--30
--40
--50
--3
--3.2
--3.4
--3.6
--3.8
--2.8
5