MRF8S18210WGHSR3 FREESCALE [Freescale Semiconductor, Inc], MRF8S18210WGHSR3 Datasheet - Page 8

• Manufacturer Part Number: MRF8S18210WGHSR3
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

8
MRF8S18210WHSR3 MRF8S18210WGHSR3
(1) Load impedance for optimum P1dB power.
Z
Z
(1) Load impedance for optimum P1dB efficiency.
Z
Z
source
load
source
load
(MHz)
(MHz)
1930
1960
1995
1930
1960
1995
f
f
= Impedance as measured from gate contact to ground.
= Impedance as measured from drain contact to ground.
= Impedance as measured from gate contact to ground.
= Impedance as measured from drain contact to ground.
Figure 12. Load Pull Performance — Maximum Drain Efficiency Tuning
5.06 -- j7.33
10.2 -- j6.91
13.1 -- j0.18
5.06 -- j7.33
10.2 -- j6.91
13.1 -- j0.18
Z
Z
source
source
(Ω)
(Ω)
Figure 11. Load Pull Performance — Maximum P1dB Tuning
V
V
DD
DD
= 30 Vdc, I
= 30 Vdc, I
Input
Load Pull
Tuner
Input
Load Pull
Tuner
2.07 -- j3.37
2.14 -- j3.42
2.39 -- j3.53
2.44 -- j1.46
2.23 -- j1.55
2.31 -- j1.63
Z
Z
load
load
(Ω)
(Ω)
(1)
(1)
DQ
DQ
= 1300 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
= 1300 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Z
Z
source
source
(dBm)
(dBm)
54.3
54.2
54.1
52.7
52.6
52.6
Device
Under
Test
Device
Under
Test
P1dB
P1dB
(W)
269
263
257
(W)
186
182
182
Z
Z
load
load
Max Drain Efficiency
Max Output Power
η
η
49.2
48.7
48.5
58.9
57.8
56.6
D
D
(%)
(%)
Output
Load Pull
Tuner
Output
Load Pull
Tuner
(dBm)
(dBm)
55.2
55.1
55.0
53.4
53.5
53.3
P3dB
P3dB
Freescale Semiconductor, Inc.
(W)
331
324
316
(W)
219
224
214
η
η
51.2
50.8
49.7
61.4
60.3
59.8
D
D
(%)
(%)
RF Device Data