Si4410DY-REVA Vishay Intertechnology, Si4410DY-REVA Datasheet - Page 2

• Manufacturer Part Number: Si4410DY-REVA
• Description: N-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si4410DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing. Values shown are for product revision A.
b
Parameter
a
a
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
r
r
I
DS(
DS(on)
t
t
I
GS(th)
I
I
V
D(on)
Q
Q
d(off)
GSS
Q
d(on)
DSS
DSS
g
Q
R
t
SD
t
t
rr
fs
gs
gd
r
f
gt
g
g
)
V
V
V
V
V
I
D
DS
DS
DS
DS
DS
^ 1 A, V
I
F
= 15 V V
= 15 V, V
= 15 V, V
V
= 30 V, V
= 15 V, V
V
V
V
V
V
DS
V
= 2.3 A, di/dt = 100 A/ms
I
DS
V
V
DS
Test Condition
S
DD
DD
DS
DS
GS
GS
= 2.3 A, V
= 0 V, V
= V
w 5 V, V
= 30 V, V
= 25 V, R
= 25 V, R
= 15 V, I
= 10 V, I
= 4.5 V, I
GEN
GS
GS
GS
GS
GS
GS
, I
= 10 V, R
GS
= 0 V, T
= 10 V I
= 10 V, I
= 10 V, I
D
= 5 V, I
GS
GS
D
GS
D
= 250 mA
L
L
D
= "20 V
= 10 A
=10 A
= 25 W
= 25 W
= 10 V
= 5 A
= 0 V
= 0 V
J
D
D
D
D
G
= 55_C
= 10 A
= 10 A
= 10 A
= 10 A
= 6 W
Min
1.0
0.5
20
0.011
0.015
Typ
0.7
7.0
1.5
38
20
37
19
70
20
40
7
9
S-31062—Rev. K, 26-May-03
Document Number: 71726
0.0135
"100
Max
0.020
100
1.1
2.6
25
34
60
30
20
80
80
1
Unit
nC
nC
nA
mA
mA
ns
W
W
W
V
A
S
V