SI4500BDY-T1 Vishay Intertechnology, SI4500BDY-T1 Datasheet
SI4500BDY-T1
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SI4500BDY-T1 Summary of contents
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... Top View Ordering Information: Si4500BDY-T1 Si4500BDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a,b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si4500BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... Total Gate Charge (nC) g Gate Charge Document Number: 72281 S-61005-Rev. C, 12-Jun- 1600 1400 1200 1000 Si4500BDY Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...
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... Si4500BDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 150 ° 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1.5 75 100 125 150 100 r Limited DS(on ...
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... Document Number: 72281 S-61005-Rev. C, 12-Jun- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4500BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... Si4500BDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted thru 3 Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.12 0.08 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current 5 Total Gate Charge (nC) ...
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... Limited DS(on D(on) Limited °C A 0.1 Single Pulse BV Limited DSS 0.01 0 Drain-to-Source Voltage (V) DS Safe Operating Area Si4500BDY Vishay Siliconix 0.20 0. 0.08 0.04 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... Si4500BDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...
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... Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's ...