29f0408 Maxwell Technologies, 29f0408 Datasheet

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29f0408

Manufacturer Part Number
29f0408
Description
32 Megabit 4m X 8-bit Flash Memory
Manufacturer
Maxwell Technologies
Datasheet

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Part Number:
29f0408RPFE
Manufacturer:
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Quantity:
262
F
• Single 5.0 V supply
• Excellent Single Event Effect
· - SEL
· - SEU
• Organization:
• Automatic program and erase
• 528-Byte page read operation
• Fast write cycle time
• Command/address/data multiplexed I/O port
• Hardware data protection
• Reliable CMOS floating-gate technology
• Command register operation
• 44 pin flat package
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
EATURES
- SEU saturated cross section: 2E-6 cm
- Memory cell array: (4M + 128k) bit x 8bit
- Data register: (512 + 16) bit x 8bit
- Page program: (512 + 16) Byte
- Block erase: (8K + 256) Byte
- Status register
- Random access: 10 µ s (max)
- Serial page access: 50 ns (min)
- Program time: 250 µ s (typ)
- Block erase time: 2 ms (typ)
- Program/erase lockout during power transitions
- Endurance: 1,000,000 program/erase cycles
- Data retention: 10 years
TH
TH
: > 60 MeV/mg/cm
: = 37 MeV/mg/cm
:
2
2
2
/bit
11.08.02 Rev 2
D
Maxwell Technologies’ 29F0408 high-performance flash mem-
ory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash
Memory with a spare 128K (131,072) x 8-bit. A program oper-
ation programs the 528-byte page in 250 µ s and an erase
operation can be performed in 2 ms on an 8K-byte block. Data
within a page can be read out at 50 ns cycle time per byte.
The on-chip write controller automates all program and erase
functions, including pulse repetition, where required, and inter-
nal verify and margining of data. Even write-intensive systems
can take advantage of the 29F0408’s extended reliability of
1,000,000 program/erase cycles by providing either ECC
(Error Correction Code) or real time mapping-out algorithm.
These algorithms have been implemented in many mass stor-
age applications. The spare 16 bytes of a page combined with
the other 512 bytes can be utilized by system-level ECC. The
29F0408 is an optimum solution for large non-volatile storage
applications such as solid state storage, digital voice recorder,
digital still camera and other portable applications requiring
nonvolatility.
Maxwell Technologies' patented R
ogy incorporates radiation shielding in the microcircuit pack-
age. Capable of surviving in space environments, the
29F0408 is ideal for satellite, spacecraft, and space probe
missions. It is available with packaging and screening up to
Class S.
ESCRIPTION
Logic Diagram
All data sheets are subject to change without notice
32 Megabit (4M x 8-Bit)
:
AD
Flash Memory
-P
AK
©2002 Maxwell Technologies
29F0408
® packaging technol-
All rights reserved.
1

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29f0408 Summary of contents

Page 1

... D ESCRIPTION Maxwell Technologies’ 29F0408 high-performance flash mem- ory. The 29F0408 (4,194,304) x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit. A program oper- ation programs the 528-byte page in 250 µ s and an erase operation can be performed 8K-byte block. Data /bit within a page can be read out cycle time per byte ...

Page 2

... Supply Voltage Output Buffer Voltage ABLE INOUT ESCRIPTION D ESCRIPTION after the falling edge of RE which also increments the internal column REA All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 2 ©2002 Maxwell Technologies All rights reserved. ...

Page 3

... YMBOL ABLE ELTA IMITS 29F0408 ABLE EST ONDITION ° = -40 125 C, TO UNLESS OTHERWISE NOTED 0.4 -- 0.8 All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 ATINGS 1 NIT -0 ...

Page 4

... 0 APACITANCE 29F0408 C ABLE S T YMBOL EST C ONDITION I 29F0408 M S ABLE ODE ELECTION L All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 ...

Page 5

... X 1. When SE is high, spare area is deselected can should be biased to CMOS high or CMOS low for standby 29F0408 P ABLE ( ± 10 ARAMETER Program time Number of partial program cycles in the same page Block erase time T 8 ...

Page 6

... Megabit (4M x 8-Bit) Flash Memory T 10. 29F0408 AC T ABLE ( ± 10 ARAMETER CLE set-up time CLE hold time CE setup time CE hold time WE pulse width ALE setup time ALE hold time Data setup time Data hold time Write cycle time ...

Page 7

... Megabit (4M x 8-Bit) Flash Memory T 11. 29F0408 AC C ABLE ( ± 10 ARAMETER CE low to status output RE high to WE low WE high to RE low RE access time (read ID) Device resetting time (read/program/erase/after erase suspend) 1. Not Tested goes high within 30 ns after the rising edge of the last RE, R/B will not return ...

Page 8

... Status read after program Read back (verify after program) ECC correction Æ Verify ECC ECC correction All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 C OUNTERMEASURE Block replacement Block replacement Æ Block replacement or ©2002 Maxwell Technologies All rights reserved. ...

Page 9

... Megabit (4M x 8-Bit) Flash Memory IGURE ROGRAM FLOW CHART All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 9 ©2002 Maxwell Technologies All rights reserved. ...

Page 10

... Megabit (4M x 8-Bit) Flash Memory IGURE RASE LOW HART All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 10 ©2002 Maxwell Technologies All rights reserved. ...

Page 11

... Megabit (4M x 8-Bit) Flash Memory IGURE EAD LOW HART IGURE LOCK EPLACEMENT All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 11 ©2002 Maxwell Technologies All rights reserved. ...

Page 12

... Pointer Operation: The 29F0408 has three modes to set the destination of the pointer. The pointer is set to “A” area by the “00h” com- mand, to “B” area by the “01h” command, and to “C” area by the “50h” command. The Destination Pointer Table shows the destination of the pointer, and the block diagram shows the diagram of its operation ...

Page 13

... CE during the data-loading and reading would provide significant savings in power consumption ROGRAMMING WITH UCCESSIVE 13 OINT TATUS FTER ACH All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 P O OINTER PERATION PERATION ©2002 Maxwell Technologies All rights reserved. 13 ...

Page 14

... CE to valid data(tCEA) must be kept greater than 45ns EAD PERATION ITH All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 ’ ARE ’ ARE ©2002 Maxwell Technologies All rights reserved. ...

Page 15

... Megabit (4M x 8-Bit) Flash Memory F 10 IGURE OMMAND ATCH YCLE F 11 IGURE DDRESS ATCH YCLE All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 15 ©2002 Maxwell Technologies All rights reserved. ...

Page 16

... Megabit (4M x 8-Bit) Flash Memory F F 13. S IGURE EQUENTIAL 12 IGURE NPUT ATA ATCH YCLE (CLE = ALE = L) UT YCLE AFTER EAD All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 16 ©2002 Maxwell Technologies All rights reserved. ...

Page 17

... Megabit (4M x 8-Bit) Flash Memory F IGURE F 14 IGURE TATUS EAD YCLE 15. READ1 PERATION EAD All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 AGE ©2002 Maxwell Technologies All rights reserved. 17 ...

Page 18

... Megabit (4M x 8-Bit) Flash Memory F 16. READ1 O IGURE F IGURE (I PERATION NTERCEPTED BY 17. READ2 PERATION EAD All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 CE AGE ©2002 Maxwell Technologies All rights reserved. 18 ...

Page 19

... Megabit (4M x 8-Bit) Flash Memory F IGURE F 18 EQUENTIAL OW EAD 19 IGURE AGE ROGRAM PERATION All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 PERATION ©2002 Maxwell Technologies All rights reserved. 19 ...

Page 20

... Megabit (4M x 8-Bit) Flash Memory F 20. B IGURE F 21. M IGURE LOCK RASE PERATION RASE & ANUFACTURE EVICE EAD All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 LOCK O PERATION 20 ©2002 Maxwell Technologies All rights reserved. ...

Page 21

... The Read1 command (00h/01h) is needed to move the pointer back to the main area. Figures 22 thru 25 show typical sequence and timings for each read opera- tion. ). The CPU can detect the comple- R All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 21 ©2002 Maxwell Technologies All rights reserved. ...

Page 22

... Megabit (4M x 8-Bit) Flash Memory F 22. READ1 O IGURE PERATION All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 22 ©2002 Maxwell Technologies All rights reserved. ...

Page 23

... Megabit (4M x 8-Bit) Flash Memory F 23. READ2 O IGURE PERATION All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 23 ©2002 Maxwell Technologies All rights reserved. ...

Page 24

... Megabit (4M x 8-Bit) Flash Memory F IGURE F 25. S IGURE 24 READ1 O EQUENTIAL OW READ2 O (SE = EQUENTIAL PERATION All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 PERATION ) FIXED LOW ©2002 Maxwell Technologies All rights reserved. 24 ...

Page 25

... The command register remains in Read Status command mode until another valid command is written to the command register. F IGURE 26. P & ROGRAM EAD TATUS OPERATION All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 25 ©2002 Maxwell Technologies All rights reserved. ...

Page 26

... Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read cycle, a read command (00h or 50h) should be given before sequential page read cycle IGURE LOCK RASE PERATION All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 26 ©2002 Maxwell Technologies All rights reserved. ...

Page 27

... The command register remains in Read ID mode until further commands are issued to it. Figure 28 shows the operation sequence. 14 EAD TATUS EGISTER EFINITION F 28 IGURE EAD PERATION All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 27 ©2002 Maxwell Technologies All rights reserved. ...

Page 28

... F 29. RESET O IGURE PERATION T 15 ABLE EVICE TATUS is below about 2V. WP pin provides hardware CC during power-up and power-down as shown in Figure 30. IL All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 after the RST 28 ©2002 Maxwell Technologies All rights reserved. ...

Page 29

... R/B outputs to be Or-tied. An appropriate pull-up resister is required for proper operation and the value may be calculated by following equation. 30 AVEFORMS FOR OWER All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 T RANSITION ©2002 Maxwell Technologies All rights reserved. 29 ...

Page 30

... Megabit (4M x 8-Bit) Flash Memory F 31. READY/BUSY IGURE All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 30 ©2002 Maxwell Technologies All rights reserved. ...

Page 31

... BSC 0.350 0.370 0.022 0.027 0.005 -- 44 Note: All dimensions in inches All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 M AX 0.160 0.019 0.10 1.212 0.682 0.705 0.460 0.122 0.398 0.032 -- 31 ©2002 Maxwell Technologies All rights reserved. ...

Page 32

... Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Tech- nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 32 ©2002 Maxwell Technologies All rights reserved. ...

Page 33

... Megabit (4M x 8-Bit) Flash Memory Product Ordering Options Model Number 29F0408 Feature Option Details Screening Flow Monolithic S = Maxwell Class Maxwell Class Industrial (testing @ -40°C, +25°C, +125° Engineering (testing @ +25° Flat Pack Package Radiation Feature 32 Megabit (4M x 8-Bit) Flash ...

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