UF2805B_11 MA-COM [M/A-COM Technology Solutions, Inc.], UF2805B_11 Datasheet

UF2805B_11

Manufacturer Part Number

UF2805B_11

Description

RF Power MOSFET Transistor

Manufacturer

MA-COM [M/A-COM Technology Solutions, Inc.]

Datasheet

1.UF2805B_11.pdf (3 pages)

Current page: 1 of 3
Download datasheet (214Kb)

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

RF Power MOSFET Transistor

5W, 100-500 MHz, 28V

Features



UF2805B

ABSOLUTE MAXIMUM RATINGS AT 25° C

Drain-Source Voltage

Gate-Source Voltage

Drain-Source Current

Power Dissipation

Junction Temperature

Storage Temperature

Thermal Resistance

TYPICAL DEVICE IMPEDANCES

from gate to source.

measured from drain to ground

ELECTRICAL CHARACTERISTICS AT 25°C

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

Gate Threshold Voltage

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Capacitance

Power Gain

Drain Efficiency

Load Mismatch Tolerance

LOAD

N-channel enhancement mode device

DMOS structure

Lower capacitances for broadband operation

Common source configuration

Lower noise floor

100 MHz to 500 MHz operation

is the series equivalent input impedance of the device

F (MHz)

Parameter

is the optimum series equivalent load impedance as

100

300

500

Parameter

=28V, I

=50 mA, P

Symbol

15.0-j80.0

8.0-j43.0

4.0-j29.0

STG

(Ω)

OUT

-55 to +150

Rating

=100.0 W

14.4

12.1

VSWR-T

200

Symbol

1.4

GS(TH)

DSS

GSS

OSS

RSS

ISS

DSS

35.0+j55.0

29.0+j40.0

28.0+j29.0

LOAD

Min

Units

2.0

°C/W

(Ω)

°C

Max

20:1

1.0

6.0

7.0

2.4

Units

µA

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

Package Outline

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

= 0.0 V , I

= 28.0 V , V

= 20.0 V , V

= 10.0 V , I

= 28.0 V , F = 1.0 MHz

= 28.0 V, I

= 2.0 mA

= 10.0 mA

1.0 mA , ∆ V

= 50 mA, P

= 0.0 V

Test Conditions

Released;

OUT

= 5.0 W F =500 MHz

= 5.0 W F =500MHz

= 1.0V, 80 μs Pulse

RoHS Compliant

20 Jan 11

Related parts for UF2805B_11

UF2805B_11 Summary of contents

Page 1

UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Features  N-channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Lower noise floor  100 MHz to 500 MHz operation ABSOLUTE ...

Page 2

UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V CAPACITANCES VOLTAGE VS F=1.0MHz RSS (V) DS GAIN FREQUENCY ...

Page 3

UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V TEST FIXTURE SCHEMATIC TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or ...

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