SDT452 SAMHOP [SamHop Microelectronics Corp.], SDT452 Datasheet - Page 3

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SDT452

Manufacturer Part Number
SDT452
Description
P -Channel E nhancement Mode F ield E ffect Transistor
Manufacturer
SAMHOP [SamHop Microelectronics Corp.]
Datasheet
E LE CTR ICAL CHAR ACTE R IS TICS (T
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
Diode Forward Voltage
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
3000
2500
2000
1500
1000
Parameter
500
10
8
6
4
2
0
0
F igure 1. Output C haracteris tics
0
0
-V
-V
F igure 3. C apacitance
DS
DS
0.5
5
, Drain-to S ource Voltage (V )
, Drain-to-S ource Voltage (V )
1.0
10
15
1.5
-V
G S
2.0
20
C os s
C is s
C rs s
=10,9,8,7,6V
S ymbol
-V
G S
V
2.5
25
=5V
S D
A
3.0
30
=25 C unless otherwise noted)
3
b
V
GS
Condition
F igure 4. On-R es is tance Variation with
= 0V, Is =-5.3A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
-50
8
4
0
0
F igure 2. Trans fer C haracteris tics
V
I
G S
D
=-5.3A
-V
=-10V
T j, J unction T emperature ( C )
0.5
G S
S DT 452AP
0
, G ate-to-S ource Voltage (V )
1
Temperature
T j=125 C
50
1.5
Min Typ Max Unit
-55 C
25 C
2
100
-0.84 -1.3
2.5
C
150
3
V
5

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