STB8444 SAMHOP [SamHop Microelectronics Corp.], STB8444 Datasheet

no-image

STB8444

Manufacturer Part Number
STB8444
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
SAMHOP [SamHop Microelectronics Corp.]
Datasheet
1.STB8444.pdf (8 pages)
Details are subject to change without notice.
Symbol
V
V
I
I
E
P
R
R
N-Channel Enhancement Mode Field Effect Transistor
ABSOLUTE MAXIMUM RATINGS ( T
T
THERMAL CHARACTERISTICS
D
DM
S mHop Microelectronics C orp.
J ,
DS
GS
AS
D
a
PRODUCT SUMMARY
T
JC
JA
V
STG
40V
DSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage
Temperature Range
Sigle Pulse Avalanche Energy
Maximum Power Dissipation
80A
I
D
STB SERIES
TO-263(DD-PAK)
R
-Pulsed
4.8 @ VGS=10V
DS(ON)
b
(m
Ω
a
) Max
A
=25 ° C unless otherwise noted )
d
T
T
C
C
=25 ° C
=25 ° C
STP SERIES
TO-220
FEATURES
Super high dense cell design for low R
Rugged and reliable.
TO-220 and TO-263 Package.
1
STB/P8444
G
-55 to 150
Limit
±20
62.5
264
306
1.8
80
62
40
www.samhop.com.tw
DS(ON)
D
S
.
Mar,26,2008
Units
°C/W
°C/W
mJ
°C
W
Ver 1.0
V
V
A
A

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STB8444 Summary of contents

Page 1

S mHop Microelectronics C orp. a N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY DS(ON) DSS 80A 4.8 @ VGS=10V 40V STB SERIES TO-263(DD-PAK) ABSOLUTE MAXIMUM RATINGS ( T Symbol Parameter V Drain-Source Voltage DS V ...

Page 2

STB/P8444 ELECTRICAL CHARACTERISTICS 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage Current I GSS ON CHARACTERISTICS Gate Threshold Voltage V GS(th) R Drain-Source On-State Resistance DS(ON) g Forward Transconductance ...

Page 3

STB/P8444 120 = 0 Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics ...

Page 4

STB/P8444 Gate-Sorce Voltage(V) GS Figure 7. On-Resistance vs. Gate-Source Voltage 9000 7500 Cis s 6000 4500 3000 1500 ...

Page 5

STB/P8444 D.U 20V 0.01 tp Unclamped Inductive Test Circuit Figure 13a D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ingle P uls e 0.01 0.00001 0.0001 F igure 14. Normalized T ...

Page 6

STB/P8444 PACKAGE OUTLINE DIMENSIONS TO-220 6 Ver 1.0 Mar,26,2008 www.samhop.com.tw ...

Page 7

STB/P8444 PACKAGE OUTLINE DIMENSIONS TO-263AB 7 Ver 1.0 Mar,26,2008 www.samhop.com.tw ...

Page 8

STB/P8444 TO-220/263AB Tube 17.5 5.40 0. ANTISTATIC 1.70 + 7.67 0.20 5. 536 1 8 Ver 1.0 + 5.4 0.2 + 3.5 0.2 + 2.6 0.2 + 0.5 0.1 5.10 4.30 Mar,26,2008 www.samhop.com.tw ...

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