STB8444 SAMHOP [SamHop Microelectronics Corp.], STB8444 Datasheet - Page 3

• Manufacturer Part Number: STB8444
• Description: N-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: SAMHOP [SamHop Microelectronics Corp.]

STB/P8444
Figure 3. On-Resistance vs. Drain Current
Figure 5. Gate Threshold Variation
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
120
96
72
48
24
0
7
6
5
4
3
2
1
-50 -25
0
Figure 1. Output Characteristics
1
Tj, Junction Temperature ( C)
V
0.5
V
DS
G S
24
, Drain-to-Source Voltage (V)
=6V
with Temperature
0
and Gate Voltage
I
D
1
, Drain Current (A)
25
48
V
V
G S
G S
50
1.5
=10V
=10V
72
75
2
V
I
D
DS
=250uA
100 125 150
=V
V
96
G S
G S
2.5
=5V
120
3
3
Figure 6. Breakdown Voltage Variation
1.2
1.1
1.0
0.8
0.7
0.9
1.3
2.0
1.8
1.6
1.4
1.2
1.0
0.0
20
16
12
Figure 4. On-Resistance Variation with
8
4
0
-50 -25
0
0
Figure 2. Transfer Characteristics
Drain Current and Temperature
I
D
Tj, Junction Temperature ( C)
=250uA
Tj, Junction Temperature ( C)
V
25
1
GS
with Temperature
, Gate-to-Source Voltage (V)
V
0
I
D
G S
= 80 A
50
=10V
2
25
Tj=125 C
50
75
25 C
3
75
100
4
www.samhop.com.tw
100 125 150
-55 C
125
5
Tj( C)
150
6
Mar,26,2008
Ver 1.0