STB8444 SAMHOP [SamHop Microelectronics Corp.], STB8444 Datasheet - Page 4

• Manufacturer Part Number: STB8444
• Description: N-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: SAMHOP [SamHop Microelectronics Corp.]

STB/P8444
2200
9000
7500
6000
4500
3000
1500
1000
100
600
12
10
10
Figure 11.switching characteristics
8
6
4
2
0
0
0
0
1
C rs s
V DS =20V ,ID=1A
V G S =10V
Figure 7. On-Resistance vs.
V
DS
V
5
Figure 9. Capacitance
Gate-Source Voltage
GS
, Drain-to Source Voltage(V)
2
Rg, Gate Resistance(
C s s
Cis s
o
, Gate-Sorce Voltage(V)
6 10
10
4
15
75 C
T D ( o f f )
T f
6
60 100
20
25 C
I
Ω
125 C
D
=80 A
)
T D ( o n )
8
25
300
T r
10
30
600
4
Figure 8. Body Diode Forward Voltage
1000
10
20.0
10.0
100
1.0
8
6
4
2
0
10
1
0.0
0.1
0
V
Variation with Source Current
SD
V
S ingle P ulse
Figure 12. Maximum Safe
I
20 40 60
D
V
DS
, Body Diode Forward Voltage(V)
T c=25 C
V
G S
= 25A
Figure 10. Gate Charge
0.2
= 20V
Qg, Total Gate Charge(nC)
DS
=10V
, Drain-Source Voltage (V)
Operating Area
1
0.4
125 C
125
80 100 120 140 160
0.6
10
www.samhop.com.tw
0.8
25 C
75 C
100
1.0
Mar,26,2008
Ver 1.0