glt4160n04 G-Link Technology Corporation, glt4160n04 Datasheet - Page 6

• Manufacturer Part Number: glt4160n04
• Description: 4m X 4 Cmos Dynamic Ram With Extended Data Output
• Manufacturer: G-Link Technology Corporation

AC Characteristics
T
An initial pause of 200 s and 8
Parameter
Read or Write Cycle Time
Read Modify Write Cycle Time
Access Time from RAS
Access Time from CAS
Access Time from Column Address
Row Address Set-Up Time
Row Address Hold Time
Column Address Set-Up Time
Column Address Hold Time
Column Address to RAS Lead Time
Column Address Hold Time Referenced to RAS
Read Command Set-Up Time
Read Command Hold Time Referenced to CAS
Read Command Hold Time Referenced to RAS
Write Command Set-Up Time
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
RAS Precharge Time
RAS Pulse Width
RAS Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
CAS to Output Low-Z
CAS to Output High-Z
CAS Hold Time
CAS Pulse Width
CAS to RAS Precharge Time
A
= 0 C to 70 C , -20 C to 85 C V
G -LINK
CAS
Web : www.glink.com.tw
CC
G-Link Technology Corporation,Taiwan
-before-
= 2 V
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Symbol Min.
RAS
0.2V, VIH/VIL = 1.7/0.4 V, V
t
t
t
TEL : [phone]
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RWC
t
t
t
WCS
WCH
RWL
CWL
t
RAC
CAC
t
RCD
RAD
RCS
RCH
RRH
RAS
CEZ
RSH
CSH
CAS
CRP
ASR
RAH
ASC
CAH
CLZ
RAL
WP
RC
RP
AA
AR
or
RAS
- 6 -
190
245
100
100
Email : [e-mail]
80
25
25
25
20
10
15
20
50
75
20
20
25
25
5
5
0
0
0
0
0
0
-only refresh cycles are required after power-up.
100
Max. Unit Notes
100
10k
10k
25
50
25
75
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
OH
1,5,10
1,2,3
1,5,6
/V
8,9
7
4
4
OL
= 1.4/0.6V
GLT4160N04
Feb 2004 (Rev. 1.4)