glt4160n04 G-Link Technology Corporation, glt4160n04 Datasheet - Page 9

• Manufacturer Part Number: glt4160n04
• Description: 4m X 4 Cmos Dynamic Ram With Extended Data Output
• Manufacturer: G-Link Technology Corporation

TEST MODE CYCLE
Parameter
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
Column address to RAS lead time
Column address to WE delay time
EDO Page Mode cycle time
EDO page mode read-modify-write cycle time
Access time form CAS precharge
Write command set-up time (Test mode in)
Write command hold time (Test mode in)
RAS pulse width
RAS hold time
RAS to WE delay time
RAS Pulse width (EDO page cycle)
CAS pulse width
CAS hold time
CAS to WE delay time
CAS Precharge to WE delay time
OE access time
OE to data delay
OE command hold time
G -LINK
Web : www.glink.com.tw
G-Link Technology Corporation,Taiwan
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Symbol Min.
t
t
t
t
t
t
t
TEL : [phone]
CPWD
PRWC
t
t
t
t
t
t
t
t
t
t
t
t
t
RASP
RWC
CWD
RWD
t
AWD
WTS
WTH
RAC
CAC
t
t
OED
OEH
RAS
CAS
RSH
CSH
CPA
OEA
RAL
RC
AA
PC
- 9 -
195
250
105
105
140
125
105
Email : [e-mail]
30
30
55
65
85
89
50
30
30
10
10
100
Max. Unit Notes
100k
10k
10k
90
30
55
60
30
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1,2,3,7
1,3,7
1,2,7
8
8
8
8
1
GLT4160N04
Feb 2004 (Rev. 1.4)