UG2B GE [General Semiconductor], UG2B Datasheet - Page 2

• Manufacturer Part Number: UG2B
• Description: ULTRAFAST EFFICIENT PLASTIC RECTIFIER
• Manufacturer: GE [General Semiconductor]

0.01
100
0.1
10
1
0.4
60
50
40
30
20
10
0
0
3.0
1.0
2.5
2.0
1.5
0.5
0
I
V
0.6
INSTANTANEOUS FORWARD VOLTAGE,
F
R
=2.0A
0
=30V
FIG. 3 - TYPICAL INSTANTANEOUS
T
P.C.B. MOUNTED
0.5 x 0.5” (12 x 12mm)
COPPER PADS
25
FORWARD CHARACTERISTICS
FIG. 1 - MAXIMUM FORWARD CURRENT
A
, AMBIENT TEMPERATURE
RATINGS AND CHARACTERISTIC CURVES UG2A THRU UG2D
JUNCTION TEMPERATURE, °C
FIG. 5 - REVERSE SWITCHING
25
0.8
50
T
CHARACTERISTICS
J
=100°C
50
DERATING CURVES
TEMPERATURE, °C
VOLTS
75
RESISTIVE OR INDUCTIVE LOAD
0.375" (9.5mm) LEAD LENGTH
T
1.0
L
, LEAD TEMPERATURE
75
100
100
T
PULSE WIDTH=300 s
1% DUTY CYCLE
1.2
J
= 25°C
125
di/dt=100A/ s
di/dt=50A/ s
di/dt=150A/ s
di/dt=20A/ s
di/dt=100A/ s
di/dt=150A/ s
di/dt=50A/ s
di/dt=20A/ s
125
150
1.4
150
Q
t
rr
rr
175
175
1.6
100
100
10
1000
10
1
100
1
0.1
0.1
1
10
1
0
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FIG. 4 - TYPICAL REVERSE LEAKAGE
PERCENT OF RATED PEAK REVERSE
20
NUMBER OF CYCLES AT 60 H
FORWARD SURGE CURRENT
REVERSE VOLTAGE, VOLTS
CHARACTERISTICS
1
40
VOLTAGE, %
T
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
L
10
=75 C
60
10
80
T
f=1.0 MH
Vsig=50mVp-p
Z
T
J
T
=25°C
J
=100°C
J
=25°C
Z
100
100
100