MA713 PANASONIC [Panasonic Semiconductor], MA713 Datasheet
MA713
Manufacturer Part Number
MA713
Description
Schottky Barrier Diodes (SBD)
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.MA713.pdf
(4 pages)
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Schottky Barrier Diodes (SBD)
MA4X713
Silicon epitaxial planar type
For switching
For wave detection
I Features
I Absolute Maximum Ratings T
Note) * : Value per chip
I Electrical Characteristics T
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
Publication date: August 2001
• Two isolated elements are contained in one package, allowing
• Two MA3X704A (MA704A) is contained in one package (of a
• Low forward voltage V
• Optimum for high frequency rectification because of its short
• Mini type 4-pin package
Reverse voltage (DC)
Peak forward
current
Forward current (DC)
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
Detection efficiency
high-density mounting
type in the same direction)
reverse recovery time (t
2. Rated input/output frequency: 200 MHz
and the leakage of current from the operating equipment.
Parameter
Parameter
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Bias Application Unit N-50BU
Single
Double
Single
Double
*
A
F
rr
, optimum for low voltage rectification
*
*
)
(MA713)
Wave Form Analyzer
(SAS-8130)
R
i
Symbol
= 50 Ω
I
T
V
I
T
FM
stg
F
R
a
j
Symbol
= 25°C
V
V
C
I
t
a
η
R
rr
F1
F2
t
= 25°C
−55 to +125
Rating
150
110
125
3. * : t
30
30
20
V
I
I
V
I
I
V
R
F
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
L
R
R
in
= 1 mA
= 30 mA
= I
= 1 mA, R
V
SKH00103AED
rr
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
R
measuring instrument
R
= 10 mA
t
r
Input Pulse
10%
t
t
δ = 0.05
(peak)
p
r
90%
= 0.35 ns
Unit
= 2 µs
mA
mA
°C
°C
V
Conditions
t
p
L
, f = 30 MHz
= 100 Ω
L
= 10 pF
t
I
F
I
I
R
Output Pulse
F
R
Marking Symbol: M1N
Internal Connection
L
= 10 mA
0.60
= 10 mA
= 100 Ω
(0.2)
+0.10
–0.05
t
I
rr
rr
10°
= 1 mA
t
(0.95)
3
2.90
1.9
2
Min
+0.02
–0.05
±0.2
(0.95)
0.5R
3
2
Typ
1.5
1.0
65
4
1
1
4
Mini4-G1 Package
Max
0.4
1.0
1
0.16
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
EIAJ : SC-61
+0.1
–0.06
Unit: mm
Unit
µA
pF
ns
%
V
1
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MA713 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA4X713 (MA713) Silicon epitaxial planar type For switching For wave detection I Features • Two isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) • Low forward voltage V ...
Page 2
MA4X713 Characteristics charts between pins 1 and 4, 2 and 3 75°C 25° −20°C = 125° −1 10 − 0.2 0.4 0.6 0.8 1.0 1.2 ...
Page 3
... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...
Page 4
... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...