MA714 PANASONIC [Panasonic Semiconductor], MA714 Datasheet

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MA714

Manufacturer Part Number
MA714
Description
Silicon epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MA714
Manufacturer:
Panasonic
Quantity:
56 000
Part Number:
MA714-TX
Manufacturer:
PANASONIC
Quantity:
2 980
Part Number:
MA714-TX
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Schottky Barrier Diodes (SBD)
MA4X714
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
I Features
I Absolute Maximum Ratings T
Note) * : Value per chip
I Electrical Characteristics T
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
• Two MA3X704As are contained in one package (Two diodes in a
• Optimum for low-voltage rectification because of its low forward
• Optimum for high-frequency rectification because of its short re-
Reverse voltage (DC)
Peak forward
current
Forward current
(DC)
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
Detection efficiency
different direction)
rise voltage (V
verse recovery time (t
2. Rated input/output frequency: 2 000 MHz
3. * : t
human body and the leakage of current from the operating equipment
Parameter
Parameter
rr
measuring instrument
F
)
Single
Double
Single
Double
*
rr
)
*
*
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Symbol
I
T
V
I
T
FM
stg
F
R
a
j
Symbol
= 25°C
Bias Aplication Unit N-50BU
V
V
C
a
I
t
A
η
R
rr
F1
F2
t
= 25°C
−55 to +125
Rating
W.F.Analyzer
(SAS-8130)
R
150
110
125
30
30
20
i
= 50 Ω
V
I
I
V
I
I
V
R
F
F
F
rr
L
R
R
in
= 1 mA
= 30 mA
= I
= 1 mA, R
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
R
= 10 mA
(peak)
Unit
mA
mA
°C
°C
V
Conditions
L
, f = 30 MHz
= 100 Ω
L
= 10 pF
V
R
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
Marking Symbol: M1P
Internal Connection
= 0.35 ns
= 2 µs
t
p
t
0.65 ± 0.15
0.1 to 0.3
0.4 ± 0.2
Min
I
F
4
3
I
I
R
4
3
Output Pulse
F
R
L
= 10 mA
= 10 mA
= 100 Ω
t
I
Typ
rr
1.5
1.5
1.0
rr
2.8
Mini Type Package (4-pin)
65
= 1 mA
+ 0.25
− 0.05
+ 0.2
− 0.3
0.5 R
t
Max
0.4
1.0
1
2
1
1
2
0.65 ± 0.15
1 : Cathode 1
2 : Anode 2
3 : Cathode 2
4 : Anode 1
Unit : mm
Unit
µA
pF
ns
%
V
V
1

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MA714 Summary of contents

Page 1

Schottky Barrier Diodes (SBD) MA4X714 Silicon epitaxial planar type For switching circuits For wave detection circuit I Features • Two MA3X704As are contained in one package (Two diodes in a different direction) • Optimum for low-voltage rectification because of its ...

Page 2

MA4X714  75°C 25° 125°C − 20° −1 10 − 0.2 0.4 0.6 0.8 1.0 1 Forward voltage V F  V ...

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