RFD4N06LSM INTERSIL [Intersil Corporation], RFD4N06LSM Datasheet
RFD4N06LSM
Related parts for RFD4N06LSM
RFD4N06LSM Summary of contents
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... Data Sheet 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is ...
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... PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulsed: pulse duration = 300 s max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 6-190 RFD4N06L, RFD4N06LSM Unless Otherwise Specifi Unless Otherwise Specified SYMBOL TEST CONDITIONS ...
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... 125 - GATE TO SOURCE VOLTAGE (V) GS FIGURE 5. TRANSFER CHARACTERISTICS 6-191 RFD4N06L, RFD4N06LSM Unless Otherwise Specifi 100 125 150 o C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT 100 o T ...
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... V , DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms FIGURE 11. SWITCHING TIME TEST CIRCUIT 6-192 RFD4N06L, RFD4N06LSM Unless Otherwise Specified (Continued) 1.5 0.5 150 200 o C) FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE 0V 1MHz GS C ...
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... For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 6-193 RFD4N06L, RFD4N06LSM EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd ...