PSMN8R0-30YL_1105 PHILIPS [NXP Semiconductors], PSMN8R0-30YL_1105 Datasheet - Page 6

• Manufacturer Part Number: PSMN8R0-30YL_1105
• Description: N-channel 8.3 m? 30 V TrenchMOS logic level FET in LFPAK
• Manufacturer: PHILIPS [NXP Semiconductors]

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN8R0-30YL
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
I
(S)
g
D
60
45
30
15
fs
80
60
40
20
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
V
GS
Parameter
source-drain voltage
reverse recovery time
recovered charge
(V) = 10
0.5
15
…continued
30
4.5
1
1.5
45
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003aaf423
V
003aaf421
I
D
DS
(A)
(V)
I
3.5
Conditions
see
I
V
2.6
3.0
2.8
2.4
S
S
GS
60
= 25 A; V
= 15 A; dI
2
Rev. 2 — 16 May 2011
N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK
Figure 16
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
= 0 V; T
Fig 6.
Fig 8.
= 15 V
(pF)
C
2000
1500
1000
(A)
I
500
D
60
45
30
15
j
0
0
= 25 °C;
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
Input and reverse transfer capacitances as a
0
0
1
3
T
j
= 150 °C
PSMN8R0-30YL
2
Min
-
-
-
6
T
3
j
= 25 °C
Typ
0.9
34
30
9
© NXP B.V. 2011. All rights reserved.
4
V
003aaf422
003aaf424
V
GS
GS
Max
1.2
-
-
C
C
(V)
(V)
rss
iss
12
5
Unit
V
ns
nC
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