74HCT10PW,112 NXP Semiconductors, 74HCT10PW,112 Datasheet - Page 2

IC TRIPLE 3-IN NAND GATE 14TSSOP

74HCT10PW,112

Manufacturer Part Number
74HCT10PW,112
Description
IC TRIPLE 3-IN NAND GATE 14TSSOP
Manufacturer
NXP Semiconductors
Series
74HCTr

Specifications of 74HCT10PW,112

Logic Type
NAND Gate
Number Of Inputs
3
Number Of Circuits
3
Current - Output High, Low
4mA, 4mA
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
14-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2767-5
935186270112
Philips Semiconductors
FEATURES
GENERAL DESCRIPTION
The 74HC/HCT10 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL).
They are specified in compliance with JEDEC standard no. 7A.
The 74HC/HCT10 provide the 3-input NAND function.
QUICK REFERENCE DATA
GND = 0 V; T
Notes
1. C
2. For HC the condition is V
ORDERING INFORMATION
See
December 1990
t
C
C
PHL
Output capability: standard
I
Triple 3-input NAND gate
I
PD
SYMBOL
CC
f
f
C
V
For HCT the condition is V
i
o
“74HC/HCT/HCU/HCMOS Logic Package Information”
/ t
CC
PD
= input frequency in MHz
L
category: SSI
= output frequency in MHz
(C
PLH
= output load capacitance in pF
P
= supply voltage in V
is used to determine the dynamic power dissipation (P
L
D
= C
V
CC
amb
PD
2
propagation delay nA, nB, nC to nY
input capacitance
power dissipation capacitance per gate
= 25 C; t
V
f
o
CC
) = sum of outputs
2
f
r
i
+
= t
I
PARAMETER
= GND to V
I
f
= GND to V
= 6 ns
(C
L
V
CC
2
CC
CC
f
O
) where:
1.5 V.
C
notes 1 and 2
2
.
L
= 15 pF; V
D
CONDITIONS
in W):
CC
= 5 V
9
3.5
12
HC
TYPICAL
Product specification
74HC/HCT10
11
3.5
14
HCT
ns
pF
pF
UNIT

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