TN0104N3 SUTEX [Supertex, Inc], TN0104N3 Datasheet - Page 2

• Manufacturer Part Number: TN0104N3
• Description: N-Channel Enhancement-Mode Vertical DMOS FETs
• Manufacturer: SUTEX [Supertex, Inc]

Thermal Characteristics
*
†
Electrical Characteristics
Notes:
1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300 s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
T
TO-92
TO-243AA
I
D
A
Symbol
BV
V
I
I
I
R
G
C
C
C
t
t
t
t
V
t
(continuous) is limited by max rated T
= 25 C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant P
GSS
DSS
D(ON)
d(ON)
r
d(OFF)
f
rr
V
R
Package
GS(th)
SD
DS(ON)
FS
ISS
OSS
RSS
GS(th)
DSS
DS(ON)
OUTPUT
INPUT
Gate Threshold Voltage
Change in V
Gate Body Leakage
Zero Gate Voltage Drain Current
ON-State Drain Current
Change in R
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward
Reverse Recovery Time
Drain-to-Source
Breakdown Voltage
Voltage Drop
Static Drain-to-Source
ON-State Resistance
10V
V
0V
0V
DD
I
D
(continuous)*
10%
0.80A
1.40A
GS(th)
DS(ON)
t
d(ON)
j
.
10%
Parameter
t
(ON)
with Temperature
90%
with Temperature
t
r
I
D
TO-92
TO-243AA
TO-92
TO-243AA
All Packages
(pulsed)
2.40A
2.90A
90%
(@ 25 C unless otherwise specified)
t
d(OFF)
t
(OFF)
t
90%
F
D
10%
increase possible on ceramic substrate.
Power Dissipation
0.34
Min
0.6
0.5
2.0
40
@ T
7-32
1.6W
1.0W
C
= 25 C
0.35
0.45
Typ
-3.8
300
0.1
1.1
2.6
5.0
2.3
1.5
0.7
3.0
7.0
6.0
5.0
1.2
†
GENERATOR
Max
-5.0
100
1.6
2.5
1.8
2.0
1.0
5.0
8.0
9.0
8.0
1.8
2.0
100
70
50
15
PULSE
1
INPUT
R
125
C/W
15
gen
jc
mV/ C
%/ C
Unit
nA
pF
ns
ns
V
V
V
A
A
A
170
C/W
78
V
V
V
V
V
V
T
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1 MHz
V
R
ja
A
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
GS
†
GS
GS
DD
GEN
= 125 C
= 0V, I
= V
= V
= 20V, V
=0V, V
= 3V, V
= 5V, V
= 10V, V
= 3V, I
= 5V, I
= 10V, I
= 10V, I
= 20V, I
= 0V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
=10V, I
= 20V, I
= 25
DS
DS
Conditions
, I
, I
D
0.80A
1.40A
D
D
SD
SD
SD
DS
I
V
D
D
DS
DS
DS
D
DR
= 1.0mA
D
D
D
DS
= 50mA
= 250mA
D
DD
DS
= 500 A
= 1.0mA
= 0.5A
= 1.0A
= 0.5A
= 1A
= 1A
= 1A
= 1A,
= Max Rating
R
*
DS
= 1A
= 20V
= 20V
= 0.8 Max Rating
= 20V
L
= 20V
= 0V
D.U.T.
OUTPUT
2.40A
2.90A
I
TN0104
DRM