ATP101-TL-H SANYO [Sanyo Semicon Device], ATP101-TL-H Datasheet
ATP101-TL-H
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ATP101-TL-H Summary of contents
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... SANYO Semiconductors Large current • 4.5V drive • Protection diode in • Symbol Conditions V DSS V GSS PW≤10μs, duty cycle≤ Tc=25°C Tch Tstg ATP101-TL-H 1.5 4.6 2.6 0.4 0 Gate 0 Drain 3 : Source 4 : Drain SANYO : ATPAK http://semicon.sanyo.com/en/network DATA SHEET Ratings --30 ±20 --25 --75 30 ...
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... --13A =1.15Ω D PW=10μs D.C.≤1% G ATP101 P.G 50Ω S Ordering Information Device ATP101-TL-H ATP101 Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--30V =0V I GSS V GS =±16V = (off =--10V =--1mA | yfs | V DS =--10V =--13A ...
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... Drain Current Time -- --15V --10V 100 (on --0.1 --1.0 --10 Drain Current ATP101 -- --10V Single pulse --25 --20 --15 --10 -- --1.5 --2.0 0 --0.5 IT15312 80 Tc=25 ° C Single pulse --13 ...
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... Total Gate Charge 100 Case Temperature °C ATP101 -75A --100 -25A Operation in 2 this area is limited (on). --1 Tc=25°C Single pulse --0 ...
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... Taping Specifi cation ATP101-TL-H ATP101 No.A1646-5/7 ...
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... Outline Drawing ATP101-TL-H ATP101 Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.5 1.5 2.3 2.3 No.A1646-6/7 ...
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... Note on usage : Since the ATP101 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...