5LN01C-TB-E SANYO [Sanyo Semicon Device], 5LN01C-TB-E Datasheet

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5LN01C-TB-E

Manufacturer Part Number
5LN01C-TB-E
Description
General-Purpose Switching Device Applications
Manufacturer
SANYO [Sanyo Semicon Device]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
5LN01C-TB-E
Manufacturer:
TOSHIBA
Quantity:
326
Part Number:
5LN01C-TB-E
Manufacturer:
SONY/索尼
Quantity:
20 000
Ordering number : EN6555B
5LN01C
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7013A-013
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
1
0.95
Parameter
2.9
3
2
0.4
1 : Gate
2 : Source
3 : Drain
SANYO : CP
0.1
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
5LN01C-TB-E
5LN01C-TB-H
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
5LN01C
62712 TKIM/33106PE MSIM TB-00002196/71400 TSIM TA-2050
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TB
Electrical Connection
Conditions
1
TB
3
2
DATA SHEET
: CP
: SC-59, TO-236, SOT-23, TO-236AB
Marking
Ratings
--55 to +150
YB
0.25
±10
150
0.1
0.4
50
No.6555-1/7
Unit
°C
°C
W
A
A
V
V

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5LN01C-TB-E Summary of contents

Page 1

... PW≤10μs, duty cycle≤ Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel 5LN01C-TB-E Packing Type: TB 5LN01C-TB-H Electrical Connection 1 http://semicon.sanyo.com/en/network 62712 TKIM/33106PE MSIM TB-00002196/71400 TSIM TA-2050 DATA SHEET ...

Page 2

... I D =50mA =500Ω PW=10μ OUT D.C.≤1% G 5LN01C P.G 50Ω S Ordering Information Device 5LN01C-TB-E 5LN01C-TB-H 5LN01C Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =50V =0V I GSS V GS =±8V = (off =10V =100μA | yfs | ...

Page 3

... Ta=75° --25°C 25° 1 0.01 0.1 Drain Current (on --60 --40 -- 100 Ambient Temperature °C 5LN01C 0.20 0.18 0.16 0. =1.5V 0.12 0.10 0.08 0.06 0.04 0.02 0 0.8 1.0 0 0.5 IT00054 100 Ta=25° 1 0.01 IT00056 100 V GS =2.5V ...

Page 4

... Ciss 7 5 Coss 3 2 Crss 1 Drain-to-Source Voltage 0.3 0.25 0.2 0.15 0.1 0. 100 Ambient Temperature °C 5LN01C 1000 100 1.0 1.1 0.01 IT00062 10 f=1MHz V DS =10V =100mA ...

Page 5

... Embossed Taping Specifi cation 5LN01C-TB-E, 5LN01C-TB-H 5LN01C No.6555-5/7 ...

Page 6

... Outline Drawing 5LN01C-TB-E, 5LN01C-TB-H 5LN01C Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 0.8 0.95 0.95 No.6555-6/7 ...

Page 7

... Note on usage : Since the 5LN01C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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