bfg540w-xr NXP Semiconductors, bfg540w-xr Datasheet - Page 3
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bfg540w-xr
Manufacturer Part Number
bfg540w-xr
Description
Npn 9 Ghz Wideband Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BFG540W-XR.pdf
(16 pages)
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
2000 May 23
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CES
EBO
tot
th j-s
NPN 9 GHz wideband transistor
(mW)
V
P tot
CE
s
s
600
400
200
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
0
10 V.
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
Fig.3 Power derating curve.
50
PARAMETER
100
PARAMETER
150
T
s
MBG248
( C)
o
open emitter
R
open collector
T
s
BE
200
= 0
85 C; see Fig.3; note 1
CONDITIONS
3
T
s
85 C; note 1
CONDITIONS
BFG540W/X; BFG540W/XR
65
MIN.
20
15
2.5
120
500
+150
175
VALUE
Product specification
MAX.
180
BFG540W
V
V
V
mA
mW
C
C
UNIT
UNIT
K/W