k9k8g08u0m-y Samsung Semiconductor, Inc., k9k8g08u0m-y Datasheet - Page 30
k9k8g08u0m-y
Manufacturer Part Number
k9k8g08u0m-y
Description
1g X 8 Bit / 2g X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K9K8G08U0M-Y.pdf
(49 pages)
- Current page: 30 of 49
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Page Program Operation
CLE
CE
WE
ALE
RE
R/B
I/Ox
K9WAG08U1M
K9K8G08U0M
x x x x
x x x x
x x x x
x x x x
x x x x
Input Command
SerialData
80h
t
WC
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
x x x x x
x x x x x
x x x x x
x x x x x
x x x x x
Co.l Add1 Col. Add2
Column Address
Row Add1
t
WC
Row Address
Row Add2 Row Add3
t
ADL
30
1 up to m Byte
Din
N
Serial Input
t
WC
Din
M
Program
Command
10h
t
WB
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
t
FLASH MEMORY
PROG
Preliminary
Read Status
Command
I/O
I/O
0
0
=0 Successful Program
=1 Error in Program
70h
t
WHR
I/O
0
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