SFH628-3 VISHAY [Vishay Siliconix], SFH628-3 Datasheet

SFH628-3

Manufacturer Part Number

SFH628-3

Description

Phototransistor, 5.3 kV TRIOS Low Current Input Optocoupler

Manufacturer

VISHAY [Vishay Siliconix]

Datasheet

1.SFH628-3.pdf (4 pages)

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FEATURES

• Very High CTR at I

• Speciﬁed Minimum CTR at I

• Good CTR Linearity Depending on

• Low CTR Degradation

• High Collector-emitter Voltage, V

• Isolation Test Voltage, 5300 V

• Low Coupling Capacitance

• Field-Effect Stable by TRIOS (TRansparent IOn

• End-Stackable, 0.100" (2.54 mm) Spacing

• High Common-mode Interference Immunity

• Underwriters Lab File #52744

•

• SMD Option — See SFH6186/6286 Data Sheet

APPLICATIONS

• Telecom

• Industrial Controls

• Battery Powered Equipment

• Ofﬁce Machines

DESCRIPTION

The SFH618A/628A feature a high current transfer

ratio, low coupling capacitance and high isolation

voltage. These couplers have a GaAs infrared emit-

ting diode emitter, which is optically coupled to a sili-

con planar phototransistor detector, and is

incorporated in a plastic DIP-4 package.

The coupling devices are designed for signal trans-

mission between two electrically separated circuits.

The couplers are end-stackable with 2.54 mm lead

spacing.

Creepage and clearance distances of >8.0 mm are

achieved with option 6. This version complies with

IEC 950 (DIN VDE 0805) for reinforced insulation up

to an operation voltage of 400 V

Document Number: 83673

Revision 17-August-01

– SFH618A-2, 63–125%

– SFH618A-3, 100–200%

– SFH618A-4, 160–320%

– SFH618A-5, 250–500%

– SFH628A-2, 63–200%

– SFH628A-3, 100–320%

– SFH628A-4, 160–500%

– SFH618A, V

– SFH628A, V

Forward Current

Shield)

(Unconnected Base)

D E

VDE 0884 Available with Option 1

=1.5 V: ≥ 32% (typical 120%)

=1.5 V: ≥ 50% (typical 160%)

=1.0 mA, V

RMS

=0.5 mA

or DC.

CEO

=0.5 V

=55 V

Maximum Ratings

Emitter

Reverse Voltage (SFH618A)............................................................. 6.0 V

DC Forward Current (SFH628A) .................................................. ±50 mA

Surge Forward Current (t

Total Power Dissipation ................................................................. 70 mW

Detector

Collector-emitter Voltage ................................................................... 55 V

Emitter-collector Voltage................................................................... 7.0 V

Collector Current ............................................................................ 50 mA

Collector Current (t

Total Power Dissipation ............................................................... 150 mW

Package

Isolation Test Voltage between Emitter and

Creepage Distance .................................................................... ≥ 7.0 mm

Clearance ................................................................................... ≥ 7.0 mm

Insulation Thickness between Emitter and Detector .................. ≥ 0.4 mm

Comparative Tracking Index

Isolation Resistance

Storage Temperature Range ............................................. –55 to +150 ° C

Ambient Temperature Range............................................. –55 to +100 ° C

Junction Temperature ......................................................................100 ° C

Soldering Temperature (max. 10 s. Dip Soldering

.030 (.76)

.045 (1.14)

Dimensions in Inches (mm)

Detector, refer to Climate DIN 40046,

part 2, Nov. 74 ..................................................................... 5300 V

per DIN IEC 112/VDE0 303, part 1 ..................................................175

Distance to Seating Plane ≥ 1.5 mm) ..........................................260 ° C

.255 (6.48)

.268 (6.81)

.018 (.46)

.022 (.56)

typ.

=500 V, T

4°

.179 (4.55)

.190 (4.83)

=25 ° C................................................................. ≥ 10

=100 ° C............................................................... ≥ 10

≤ 1.0 ms) ....................................................... 100 mA

0.100 (2.54)

.031 (.79) typ.

Phototransistor, 5.3 kV TRIOS

.050 (1.27) typ.

.130 (3.30)

.150 (3.81)

.020 (.508 )

.035 (.89)

.050 (1.27)

≤ 10 µs) (SFH628A) ............................... ±2.5 A

pin one ID

Cathode/

Cathode

Anode

Anode/

.300 (7.62) typ.

Anode

3°–9°

SFH618A/628A

Low Current Input

.008 (.20)

.012 (.30)

10°

SFH618A

SFH628A

Optocoupler

www.vishay.com

.110 (2.79)

.130 (3.30)

Collector

Emitter

Collector

Emitter

.230 (5.84)

.250 (6.35)

2–242

RMS



Ω

Related parts for SFH628-3

SFH628-3 Summary of contents

Page 1

... V CEO 4° typ. .018 (.46) .022 (.56) Maximum Ratings Emitter Reverse Voltage (SFH618A)............................................................. 6 Forward Current (SFH628A) .................................................. ±50 mA Surge Forward Current (t Total Power Dissipation ................................................................. 70 mW Detector Collector-emitter Voltage ................................................................... 55 V Emitter-collector Voltage................................................................... 7.0 V Collector Current ............................................................................ 50 mA Collector Current (t Total Power Dissipation ............................................................... 150 mW Package ...

Page 2

... F SFH618A-2 32 SFH618A 100 C F SFH618A-3 50 SFH618A 160 C F SFH618A-4 80 SFH618A-5 /I 250 SFH618A-5 125 SFH628A SFH628A-2 32 SFH628A 100 C F SFH628A-3 50 SFH628A-4 /I 160 SFH628A-4 80 Typ. Max. Unit Condition 1 µ — f=1.0 MHz ...

Page 3

Figure 1. Current Transfer Ratio (typ Figure 2. Current Transfer Ratio (typ Figure 3. Diode Forward Voltage T =25°C, V =f(I ) ...

Page 4

... Rise Time t r Turn-off Time t off Fall Time t f Figure 10. Test Circuit—SFH618A Input L Document Number: 83673 Revision 17-August-01 Figure 11. Test Circuit—SFH628A =25°C µs 6.0 3.5 5.5 5.0 Figure 12. Test Circuit and Waveforms = OUT ± 47Ω Input Pulse 10% Output Pulse ...

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