PHM8001_1 NIEC [Nihon Inter Electronics Corporation], PHM8001_1 Datasheet - Page 3

• Manufacturer Part Number: PHM8001_1
• Description: 800A 150V
• Manufacturer: NIEC [Nihon Inter Electronics Corporation]

ＭＯＳＦＥＴ
ＭＯＳＦＥＴ
ＭＯＳＦＥＴ
ＭＯＳＦＥＴ
1600
1400
1200
1000
800
600
400
200
2.5
1.5
0.5
16
14
12
10
0
8
6
4
2
0
2
1
0
-50
0
0
Fig.5- Gate Charge vs. Gate to Source Voltage
0.5
1000
Fig.3- Drain to Source On Voltage
Fig.1- Output Characteristics
Ｍｏｄｕｌｅ
Drain to Source Voltage V
1
0
2000
vs. Junction Temperature
Junction Temperature Tj
Total Gate Charge Qg
8V
V
GE
1.5
=10V
3000
−Ｓｉｎｇｌｅ
V
DD
50
=80V
2
V
4V
DD
4000
=40V
3V
I
I
I
V
2.5
D
D
D
=400A
=200A
DD
=800A
=20V
(nC)
DS
(Typical)
250μs PULSE TEST
250μs PULSE TEST
5000
(℃)
(Typical)
(V)
100
3
6000
(Typical)
3.5
８００ Ａ， １５０Ｖ
V
T
C
GS
I
D
=25℃
=800A
=10V
2V
7000
150
4
200000
175000
150000
125000
100000
75000
50000
25000
100
0.5
0.2
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
50
20
10
5
2
1
0
2
1
0
0.5
0.5
0
V
I
T
D
Fig.6- Series Gate Impedance vs. Switching Time
Fig.4- Capacitance vs. Drain to Source Voltage
C
DD
=400A
=25℃
td(off)
=80V
tf
tr
td(on)
1
2
1
Fig.2- Drain to Source On Voltage
Ciss
Crss
Coss
2
Gate to Source Voltage V
Series Gate Impedance R
vs. Gate to Source Voltage
4
Drain to Source Voltage V
2
6
5
5
10
8
10
20
I
I
10
I
D
D
D
=800A
=200A
=400A
G
ＰＨＭ８００１
ＰＨＭ８００１
ＰＨＭ８００１
ＰＨＭ８００１
GS
DS
250μs PULSE TEST
(Ω)
(Typical)
20
(V)
(V)
12
50
(Typical)
(Typical)
V
f=1MH
T
100
14
T
C
GS
50
=25℃
C
=0V
=25℃
Z
200
80
16