mgf4953a Mitsumi Electronics, Corp., mgf4953a Datasheet
mgf4953a
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mgf4953a Summary of contents
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... June/2004 DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4953A : NFmin. = 0.40dB (Typ.) MGF4954A : NFmin. = 0.60dB (Typ.) High associated gain @ f=12GHz ...
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... Square shape electrode is Drain ‡…Š‡€ ‰…Š‡€ from "A" side view MITSUBISHI (2/5) MGF4953A/MGF4954A Bottom Gate IM Source JM Drain June/2004 ...
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... Ta=25 V =-0.1V /STEP .ö „§_®¶x·t DRAIN TO SOURCE VOLTAGE V NF & (MGF4953A ) < Ta= =12GHz O „§_® DRAIN CURRENT I SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) (Ta= ...
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... C,VDS=2V,ID=10mA) Rn NFmin. Gs (ohm) (dB) (dB) 0.27 0.22 18.3 0.15 0.28 15.9 0.06 0.35 13.5 0.04 0.39 12.5 0.03 0.48 11.0 0.05 0.55 10.5 Gate Source Drain Source MITSUBISHI (4/5) MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4953A/MGF4954A S22 (ang) (mag) (ang) 70.3 0.709 -10.7 68.8 0.691 -22.7 62.2 0.682 -30.1 49.4 0.652 -41.7 42.9 0.639 -49.6 33.5 0.631 -58.5 26.2 0.628 -64.4 22.1 0.625 -71.0 17.4 0.624 -76.1 9.2 0.628 -80.4 2.2 0.612 -87.5 -4.6 0.581 -94.3 -13.0 0.540 -101 ...
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... The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer. MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) MITSUBISHI (5/5) ...