mgf4953a Mitsumi Electronics, Corp., mgf4953a Datasheet - Page 4
mgf4953a
Manufacturer Part Number
mgf4953a
Description
Super Low Noise Ingaas Hemt Leadless Ceramic Package
Manufacturer
Mitsumi Electronics, Corp.
Datasheet
1.MGF4953A.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MGF4953A
Manufacturer:
CYPRESS
Quantity:
1 000
Part Number:
MGF4953A
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Company:
Part Number:
mgf4953a-65
Manufacturer:
POWEREX
Quantity:
400
Company:
Part Number:
mgf4953a-70
Manufacturer:
Microsemi
Quantity:
1 400
S PARAMETERS
NOISE PARAMETERS
Note) Rn is normalized by 50-ohm
June/2004
(GHz)
(GHz)
12
14
18
20
Reference Point
Freq
4
8
f
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
1
2
3
4
5
6
7
8
9
Magn.
0.64
0.61
0.55
0.51
0.41
0.35
0.911
0.894
0.875
0.858
0.830
0.797
0.770
0.751
0.727
0.713
0.686
0.636
0.590
0.538
0.507
0.506
0.552
0.625
0.696
0.745
0.791
0.794
0.776
0.802
0.796
0.799
(mag)
Gamma-opt
S11
-177.3
Angle
103.5
146.4
161.9
175.3
52.7
-103.0
-110.8
-119.9
-132.8
-146.6
-165.8
170.2
140.8
110.4
-12.7
-29.2
-40.7
-53.9
-66.5
-77.7
-87.0
-94.2
(ang)
86.0
65.9
50.8
38.2
28.2
18.4
11.0
-8.5
2.9
(Ta=25 C,VDS=2V,ID=10mA)
Gate
(ohm)
Source
0.27
0.15
0.06
0.04
0.03
0.05
Rn
4.924
4.806
4.796
4.672
4.524
4.308
4.114
3.984
3.886
3.881
3.886
3.937
4.078
4.163
4.239
4.238
4.067
3.791
3.428
3.045
2.677
2.281
1.984
1.828
1.626
1.424
(mag)
MITSUBISHI
S21
NFmin.
0.22
0.28
0.35
0.39
0.48
0.55
(dB)
-102.1
-114.5
168.1
155.3
142.7
131.6
121.2
109.5
101.1
-10.5
-26.5
-40.5
-54.3
-66.5
-76.2
-84.5
-93.8
(ang)
90.8
81.4
75.0
66.0
54.7
45.0
31.5
18.9
4.5
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
(Ta=25 C,VDS=2V,ID=10mA)
(4/5)
18.3
15.9
13.5
12.5
11.0
10.5
(dB)
Gs
0.008
0.031
0.043
0.061
0.066
0.073
0.080
0.089
0.090
0.101
0.110
0.120
0.127
0.136
0.144
0.151
0.151
0.145
0.137
0.118
0.109
0.102
0.091
0.078
0.071
0.064
(mag)
Source
S12
Drain
-106.8
-114.0
-118.9
-127.7
-130.2
-138.3
-13.0
-25.2
-35.8
-48.2
-62.0
-74.0
-85.8
-97.6
(ang)
MITSUBISHI SEMICONDUCTOR <GaAs FET>
70.3
68.8
62.2
49.4
42.9
33.5
26.2
22.1
17.4
-4.6
9.2
2.2
Reference Point
MGF4953A/MGF4954A
0.709
0.691
0.682
0.652
0.639
0.631
0.628
0.625
0.624
0.628
0.612
0.581
0.540
0.485
0.396
0.283
0.159
0.076
0.164
0.271
0.375
0.455
0.539
0.607
0.675
0.730
(mag)
S22
-101.0
-112.5
-122.4
-137.3
-162.3
120.8
-10.7
-22.7
-30.1
-41.7
-49.6
-58.5
-64.4
-71.0
-76.1
-80.4
-87.5
-94.3
(ang)
54.1
31.6
20.9
14.3
8.5
5.7
2.1
0.9
June/2004