ra07m3340m Quanzhou Jinmei Electronic Co.,Ltd., ra07m3340m Datasheet - Page 2

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ra07m3340m

Manufacturer Part Number
ra07m3340m
Description
Mitsubishi Rf Mosfet Module
Manufacturer
Quanzhou Jinmei Electronic Co.,Ltd.
Datasheet

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MAXIMUM RATINGS
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
All parameters, conditions, ratings, and limits are subject to change without notice.
RA07M3340M
SYMBOL PARAMETER
T
case(OP)
P
V
V
P
I
T
2f
η
ρ
P
GG
f
out
GG
DD
out
stg
in
T
in
o
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
Frequency Range
Output Power
Total Efficiency
2
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
nd
Harmonic
(T
case
=+25°C, unless otherwise specified)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
CONDITIONS
V
P
V
P
V
Load VSWR=4:1
V
Load VSWR=20:1
DD
out
DD
in
DD
DD
=50mW
(T
=7.2V,V
=6.5W (V
=7.2V,
=4.0-9.2V, P
=9.2V, P
case
=+25°C, Z
MITSUBISHI ELECTRIC
GG
in
GG
=50mW, P
=3.5V, P
CONDITIONS
V
V
f=330-400MHz,
Z
control),
in
G
GG
DD
=25-70mW, P
=Z
G
<7.2V, P
<3.5V
=Z
L
=50Ω
L
in
2/8
=50Ω, unless otherwise specified)
=50mW
out
=7.0W (V
in
=0mW
out
<8W (V
GG
RoHS COMPLIANCE
control),
GG
control),
No degradation or destroy
No parasitic oscillation
MIN
MITSUBISHI RF POWER MODULE
330
40
7
RA07M3340M
-40 to +110
-30 to +90
RATING
TYP
9.2
70
10
4
1
MAX
400
-25
4:1
24 Jan 2006
UNIT
UNIT
MHz
mW
dBc
mA
°C
°C
W
W
%
V
V

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