ra13h8891mb Quanzhou Jinmei Electronic Co.,Ltd., ra13h8891mb Datasheet - Page 3

• Manufacturer Part Number: ra13h8891mb
• Description: Mitsubishi Rf Mosfet Module
• Manufacturer: Quanzhou Jinmei Electronic Co.,Ltd.

TYPICAL PERFORMANCE
RA13H8891MB
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
875
70
60
50
40
30
20
10
70
60
50
40
30
20
10
3
0
0
-30
V
V
P
-30
f=880MHz,
V
P
DD
GG
in
GG
in
=1mW
=1mW
=12.5V
=5V
=5V,
5
885
-25
DRAIN VOLTAGE V
-25
FREQUENCY f(MHz)
versus DRAIN VOLTAGE
I
Gp
INPUT POWER P
INPUT POWER P
DD
I
DD
Gp
I
ρ
DD
7
P
P
in
η
out
-20
out
-20
T
895
9
-15
-15
ELECTROSTATIC SENSITIVE DEVICE
P
(T
out
OBSERVE HANDLING PRECAUTIONS
905
11
case
in
in
-10
-10
(dBm)
DD
(dBm)
=+25°C, Z
(V)
f=880MHz,
V
V
13
f=915MHz,
V
V
DD
GG
DD
GG
915
=12.5V,
-5
=5V
-5
=12.5V,
P
=5V
out
15
0
0
G
120
100
80
60
40
20
0
MITSUBISHI ELECTRIC
=Z
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
L
=50Ω, unless otherwise specified)
3/8
-20
-30
-40
-50
-60
-70
40
35
30
25
20
15
10
2
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
5
0
nd
875
70
60
50
40
30
20
10
, 3
0
3
-30
rd
RoHS COMPLIANCE
f=900MHz,
V
P
GG
in
HARMONICS versus FREQUENCY
=1mW
=5V,
5
-25
885
versus DRAIN VOLTAGE
DRAIN VOLTAGE V
INPUT POWER P
I
DD
FREQUENCY f(MHz)
Gp
I
DD
3
7
P
rd
-20
out
895
9
-15
2
nd
11
in
905
-10
(dBm)
V
V
P
RA13H8891MB
DD
MITSUBISHI RF POWER MODULE
DD
GG
in
=1mW
(V)
f=900MHz,
V
V
=12.5V
=5V
DD
GG
13
P
=12.5V,
=5V
-5
out
915
15
0
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
24 Jan 2006