ra45h8994m1 Quanzhou Jinmei Electronic Co.,Ltd., ra45h8994m1 Datasheet

no-image

ra45h8994m1

Manufacturer Part Number
ra45h8994m1
Description
Mitsubishi Rf Mosfet Module
Manufacturer
Quanzhou Jinmei Electronic Co.,Ltd.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RA45H8994M1
Manufacturer:
MITSUBISHI
Quantity:
100
DESCRIPTION
Module for 12.8-volt mobile radios that operate in the 896- to
941-MHz range.
enhancement-mode MOSFET transistors. Without the gate
voltage 1 and the gate voltage 2(V
leakage current flows into the drain and the nominal output
signal (P
supplied to the gate voltage 1, the output power and the drain
current increase as the gate voltage 2 increases. The output
power and the drain current increase substantially with the gate
voltage 2 around 0V (minimum) under the condition when the
gate voltage 1 is kept in 3.4V. The nominal output power
becomes available at the state that V
(maximum). At this point, V
At V
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltages and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
• P
• Broadband Frequency Range: 896-941MHz
• Metal cap structure that makes the improvements of RF
• Low-Power Control Current I
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
RoHS COMPLIANCE
• RA45H8994M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
ORDERING INFORMATION:
RA45H8994M1
(I
radiation simple
current with the gate voltages and controlling the output power
with the input power.
lead in electronic Ceramic parts.
How ever, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
2.Lead in electronic Ceramic parts.
DD
out
The RA45H8994M1 is a 45-watt RF MOSFET Amplifier
The battery can be connected directly to the drain of the
fluorescent tubes.
GG1
≅0 @ V
>45W, η
RA45H8994M1-101
ORDER NUMBER
=3.4V & V
out
=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is
DD
T
>33%
=12.8V, V
GG2
ELECTROSTATIC SENSITIVE DEVICE
=5V, the typical gate currents are 0.4mA.
@V
OBSERVE HANDLING PRECAUTIONS
DD
GG1
=12.8V, V
GG1
=V
GG1
has to be kept in 3.4V
RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
GG2
+I
=0V)
GG1
GG2
GG1
GG2
=V
=0.4mA(typ)
=3.4V, V
SUPPLY FORM
10 modules/tray
GG2
is 4V (typical) and 5V
Antistatic tray,
=0V), only a small
MITSUBISHI ELECTRIC
GG2
=5V, P
@ V
.
in
GG1
1/9
=50mW
=3.4V, V
RA45H8994M1
GG2
1
1
2
3
4
5
=5V
BLOCK DIAGRAM
RF Input added Gate Voltage 1(P
Gate Voltage 2(V
Drain Voltage (V
RF Output (P
RF Ground (Case)
MITSUBISHI RF MOSFET MODULE
out
)
PACKAGE CODE: H2M
DD
GG2
), Battery
2
), Power Control
3
in
&V
29
th
GG1
Feb 2008
)
5
4

Related parts for ra45h8994m1

ra45h8994m1 Summary of contents

Page 1

... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors ...

Page 2

... V =3.4V), out GG2 GG1 Load VSWR=3:1 V =15.2V, P =50mW =45W (V control, V =3.4V), out GG2 GG1 Load VSWR=20:1 MITSUBISHI ELECTRIC 2/9 MITSUBISHI RF POWER MODULE RA45H8994M1 RATING 17 =0W in =50mW 4.5 6 =50mW in 100 60 -30 to +100 -40 to +110 MIN TYP MAX 896 =50mW 45 33 =4dBm No parasitic oscillation ...

Page 3

... D D MITSUBISHI ELECTRIC 3/9 MITSUBISHI RF POWER MODULE RA45H8994M1 RoHS COMPLIANCE ...

Page 4

... MITSUBISHI ELECTRIC 4/9 MITSUBISHI RF POWER MODULE RA45H8994M1 RoHS COMPLIANCE ...

Page 5

... RA45H8994M1 RoHS COMPLIANCE 67±1 60±1 49.8±1 ③ 44±1 56±1 MITSUBISHI ELECTRIC 5/9 MITSUBISHI RF POWER MODULE RA45H8994M1 ④ 0.6±0 Input added Gate Voltage 1(P 2 Gate Voltage 2(V ) GG2 3 Drain Voltage ( Output (P ) out 5 RF Ground (Case) & ...

Page 6

... Coupler GG1 - + DC Pow er Supply V GG2 ; impedance between Pin&V and ground needs to make high impedance GG1 GG1 MITSUBISHI ELECTRIC 6/9 MITSUBISHI RF POWER MODULE RA45H8994M1 Spectrum 5 Analyzer =50Ω L Directional Coupler + - DC Pow er Supply Input added Gate Voltage 1(P 2 Gate Voltage 2(V ) ...

Page 7

... η =33% th(ch-case (°C/W) (A) 3.5 0.62 0.6 9. case = =45W, the required thermal resistance R out MITSUBISHI ELECTRIC 7/9 MITSUBISHI RF POWER MODULE RA45H8994M1 RoHS COMPLIANCE V DD (V) 12 are out in th(ch-case) + 17.5 °C case + 51.3 °C case ) below 90°C. For an ambient case = ( ...

Page 8

... RA45H8994M1 ). GG2 =5V (maximum), the nominal output power becomes available. GG2 ) . Keep safety first in your circuit designs! MITSUBISHI ELECTRIC 8/9 MITSUBISHI RF POWER MODULE RA45H8994M1 RoHS COMPLIANCE =45W) is attenuated and out th 29 Feb 2008 ...

Page 9

... Phone: 408-730-5900 Fax: 408-737-1129 CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918 RA45H8994M1 GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: Phone: Fax: FRANCE: Mitsubishi Electric Europe B.V. Semiconductor ...

Related keywords