rd07mvs1-t112 Mitsumi Electronics, Corp., rd07mvs1-t112 Datasheet - Page 8
rd07mvs1-t112
Manufacturer Part Number
rd07mvs1-t112
Description
Silicon Mosfet Power Transistor,175mhz,520mhz,7w
Manufacturer
Mitsumi Electronics, Corp.
Datasheet
1.RD07MVS1-T112.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RD07MVS1-T112
Manufacturer:
CHINFA
Quantity:
5 000
Part Number:
RD07MVS1-T112
Manufacturer:
MIT
Quantity:
20 000
RD07MVS1
RD07MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=750mA)
RD07MVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=750mA)
[MHz]
[MHz]
Freq.
Freq.
1000
1050
1100
1000
1050
1100
100
150
175
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
100
150
175
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
(mag)
(mag)
0.890
0.897
0.899
0.901
0.907
0.913
0.918
0.924
0.928
0.933
0.935
0.937
0.940
0.942
0.944
0.947
0.948
0.949
0.951
0.951
0.952
0.950
0.952
0.883
0.891
0.894
0.897
0.906
0.914
0.920
0.927
0.932
0.937
0.938
0.940
0.944
0.946
0.948
0.950
0.951
0.953
0.954
0.954
0.954
0.952
0.954
ELECTROSTATIC SENSITIVE DEVICE
RoHS Compliance,
OBSERVE HANDLING PRECAUTIONS
S11
S11
-174.1
-175.6
-176.0
-176.3
-176.7
-177.0
-177.3
-177.8
-178.0
-178.3
-178.5
-178.8
-179.2
-179.4
-179.8
-172.1
-174.1
-174.6
-175.0
-175.6
-176.0
-176.4
-177.0
-177.4
-177.8
-178.0
-178.3
-178.8
-179.1
-179.5
-179.9
179.8
179.4
179.0
178.6
178.2
177.9
177.4
176.9
179.6
179.2
178.8
178.4
178.0
177.5
177.0
(ang)
(ang)
(mag)
(mag)
5.508
3.613
3.028
2.604
2.019
1.614
1.308
1.102
0.929
0.790
0.753
0.692
0.595
0.529
0.467
0.416
0.374
0.343
0.304
0.284
0.262
0.234
0.226
6.013
3.914
3.269
2.798
2.144
1.697
1.361
1.134
0.949
0.800
0.761
0.697
0.594
0.527
0.464
0.412
0.368
0.336
0.297
0.276
0.254
0.226
0.219
MITSUBISHI ELECTRIC
S21
S21
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
(ang)
(ang)
82.1
75.0
72.4
70.1
65.6
60.7
57.1
54.1
50.1
48.6
47.6
45.3
43.6
42.4
40.2
39.4
38.6
37.6
36.5
37.6
35.1
36.0
35.8
81.0
72.8
69.8
67.2
62.1
56.9
53.0
49.9
45.8
44.2
43.2
41.1
39.3
38.2
36.1
35.5
34.5
33.6
32.3
33.8
31.1
32.2
32.0
8/9
(mag)
(mag)
0.016
0.015
0.015
0.014
0.014
0.012
0.011
0.010
0.009
0.008
0.007
0.007
0.006
0.006
0.005
0.005
0.004
0.005
0.005
0.006
0.007
0.008
0.009
0.017
0.016
0.016
0.015
0.014
0.012
0.011
0.010
0.009
0.007
0.007
0.006
0.005
0.004
0.004
0.004
0.004
0.004
0.005
0.006
0.006
0.007
0.008
MITSUBISHI RF POWER MOS FET
S12
S12
RD07MVS1
(ang)
(ang)
-10.9
-12.7
-15.3
-15.8
-14.2
-14.8
-10.7
-13.1
-14.9
-18.3
-20.4
-21.6
-21.2
-21.8
-16.9
-16.0
-13.3
17.1
21.8
40.9
52.0
67.1
72.6
85.8
85.1
89.8
93.4
17.4
28.0
56.9
66.4
78.3
87.4
90.9
94.7
98.0
-3.6
-8.5
-9.6
-9.6
-7.7
-5.6
-5.3
-7.2
0.4
4.5
(mag)
(mag)
0.790
0.801
0.802
0.815
0.844
0.843
0.860
0.879
0.882
0.895
0.901
0.906
0.907
0.916
0.923
0.921
0.930
0.933
0.932
0.937
0.938
0.938
0.940
0.748
0.765
0.769
0.786
0.822
0.828
0.848
0.871
0.876
0.892
0.898
0.904
0.906
0.917
0.924
0.922
0.931
0.934
0.933
0.939
0.941
0.940
0.943
S22
S22
-172.8
-174.0
-174.1
-174.0
-174.1
-174.1
-174.4
-175.0
-175.1
-175.5
-175.8
-176.2
-176.6
-177.2
-177.6
-178.0
-178.8
-178.9
-179.3
-170.4
-171.4
-171.4
-171.3
-171.4
-171.6
-172.0
-172.9
-173.2
-173.7
-174.1
-174.6
-175.1
-175.9
-176.3
-176.9
-177.8
-178.0
-178.3
-179.4
-179.5
-179.9
179.8
179.7
179.3
178.2
178.9
(ang)
(ang)
10 Jan 2006