mw4ic2230n Freescale Semiconductor, Inc, mw4ic2230n Datasheet - Page 2

• Manufacturer Part Number: mw4ic2230n
• Description: Rf Ldmos Wideband Integrated Power Amplifiers
• Manufacturer: Freescale Semiconductor, Inc

2
MW4IC2230NBR1 MW4IC2230GNBR1
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
P
Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Typical Performances (In Freescale Test Fixture tuned for 0.4 W Avg. W - CDMA driver) V
I
DQ3
out
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Channel Temperature
Input Power
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Charge Device Model
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Power Gain
Input Return Loss
Adjacent Channel Power Ratio
Saturated Pulsed Output Power
Quiescent Current Accuracy over Temperature ( - 10 to 85°C)
Gain Flatness in 30 MHz Bandwidth
Deviation from Linear Phase in 30 MHz Bandwidth
Delay @ P
Part - to - Part Phase Variation
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select
(f = 1 kHz, Duty Cycle 10%)
= 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single - carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
= 265 mA, 2110 MHz<Frequency <2170 MHz
Select Documentation/Application Notes - AN1955.
Documentation/Application Notes - AN1977.
out
= 0.4 W CW Including Output Matching
Test Methodology
Characteristic
Test Conditions
Characteristic
Rating
(T
C
P
P
= 25°C unless otherwise noted)
out
out
= 0.4 W Avg.
= 1.26 W Avg.
Stage 1
Stage 2
Stage 3
(2)
DD
= 28 Vdc, I
DQ1
Symbol
Rating
ACPR
Delay
ΔI
P
G
IRL
ΔΦ
G
= 60 mA, I
Φ
3
sat
QT
ps
F
Symbol
Symbol
V
R
DD
V
T
P
DSS
T
θJC
GS
stg
DQ2
in
J
= 28 Vdc, I
Min
Package Peak Temperature
29
—
—
—
—
—
—
—
—
—
= 350 mA, I
DQ1
M3 (Minimum)
C5 (Minimum)
2 (Minimum)
- 53.5
31.5
0.13
260
Typ
±15
- 25
- 52
1.6
DQ3
43
±5
±1
- 65 to +175
= 60 mA, I
Class
- 0.5, +65
Value
- 0.5, +8
Value
= 265 mA,
10.5
200
5.1
2.3
20
Freescale Semiconductor
(1)
DQ2
Max
- 10
- 50
—
—
—
—
—
—
—
—
= 350 mA,
RF Device Data
(continued)
°C/W
Unit
dBm
Unit
Vdc
Vdc
Unit
Unit
dBc
°C
°C
dB
dB
dB
°C
ns
W
%
°
°