mw4ic2230n Freescale Semiconductor, Inc, mw4ic2230n Datasheet - Page 3

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mw4ic2230n

Manufacturer Part Number
mw4ic2230n
Description
Rf Ldmos Wideband Integrated Power Amplifiers
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical Performances (In Freescale Reference Application Circuit tuned for 2 - carrier W - CDMA signal) V
P
2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3
measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
out
Power Gain
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
= 0.4 W Avg., I
DQ1
= 60 mA, I
Characteristic
DQ2
= 400 mA, I
(T
C
= 25°C unless otherwise noted)
DQ3
= 245 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz,
(continued)
Symbol
ACPR
G
IM3
IRL
ps
Min
MW4IC2230NBR1 MW4IC2230GNBR1
DD
31.5
Typ
- 52
- 55
- 26
= 28 Vdc,
Max
Unit
dBc
dBc
dB
dB
3

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