C1227 IMP [IMP, Inc], C1227 Datasheet - Page 2

• Manufacturer Part Number: C1227
• Description: HV BiCMOS 1.2mm 30V Double Metal - Double Poly
• Manufacturer: IMP [IMP, Inc]

72
Min Channel Width
Min Spacing, Active Region, 5V
Poly1 Width/Space
Poly2 Width/Space
Contact Width/Space
Via Width/Space
Metal-1 Width/Space
Metal-2 Width/Space
Gate Poly Width/Space
N+/P+ Width/Space
Diffusion & Thin Films
Starting Material p<100>
Well(field)Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Base Resistance
High-Voltage Gate Oxide
Gate Oxide Thickness
Interpoly Oxide Thickness
Gate Poly Sheet Resistance
Poly2 Resistivity
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
C1227-4-98
RSH_PL P
RSHB_RB
Symbol
Physical Characteristics
HT
T
T
N-well(f)
IP
POLY1
x
x
PASS
GOX
jN+
jP+
N+
P+
M1
M2
GOX
OX
Layout Rules
1.4x1.4 m
1.4/2.0 m
3.0/2.0 m
1.4/1.6 m
2.6/1.6 m
2.6/1.6 m
1.5/2.0 m
2.5/2.0 m
Minimum
4.0 m
2.0 m
20.0
50.0
1.33
33.6
15.0
35.0
19.0
1.5
1.5
Diffusion Overlap of Contact
Poly Overlap of Contact
Metal-1 Overlap of Contact
Contact to Poly Space
Minimum Pad Opening
Metal-1 Overlap of Via
Metal-2 Overlap of Via
Minimum Pad Opening
Minimum Pad to Pad Spacing
Minimum Pad Pitch
200+900
Typical
35.0
75.0
1.66
22.0
45.0
25.0
2.1
0.4
0.4
22
22
42
2
Maximum
100.0
Process C1227
50.0
2.00
50.4
30.0
65.0
35.0
2.7
2.5
K /sq
m /
m /
K /
k /
Unit
nm
nm
nm
nm
/
/
/
m
m
Comments
n-well
oxide+nitride
65x65 m
65x65 m
1.0 m
1.0 m
5.0 m
1.5 m
1.5 m
1.0 m
1.0 m
80 m