T810-400B STMICROELECTRONICS [STMicroelectronics], T810-400B Datasheet

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... HIGH COMMUTATION TECHNOLOGY HIGH I CAPABILITY TSM DESCRIPTION The T810-xxxB and T835-xxxB series are using high performance TOPGLASS PNPN technology. These devices are intented for AC control applica- tions, using surface mount technology where high commutating and surge performances are re- quired (like power tools, Solid State Relay). ...

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... T810-xxxB / T835-xxxB THERMAL RESISTANCES Symbol Rth (j-c) Junction to case for DC Rth (j-c) Junction to case for AC 360 conduction angle ( F= 50 Hz) Rth (j-a) Junction to ambient (S = 0.5 cm GATE CHARACTERISTICS (maximum values ( G(AV) GM ELECTRICAL CHARACTERISTICS Symbol Test Conditions I V =12V (DC =12V (DC) R ...

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... Fig 1a: Maximum power dissipation versus RMS on-state current (T810 only). P( (A) T(RMS Fig 2: Correlation between maximum power dissi- pation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact. P(W) 10 Rth=5°C/W Rth=10 °C Rth=15 °C/W ...

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... T810-xxxB / T835-xxxB Fig 6: Non repetitive surge peak on-state current versus number of cycles. I (A) TSM Number of cycles Fig 8: On-state characteristics (maximum values). I (A) TM 100.0 Tj=Tj max. 10.0 Tj=25°C 1.0 V (V) TM 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4/5 Fig 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and cor- ...

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... Min. Typ. Max Min. Typ. Max. 2.20 2.40 0.086 0.90 1.10 0.035 0.03 0.23 0.001 0.64 0.90 0.025 5.20 5.40 0.204 0.45 0.60 0.017 0.48 0.60 0.018 6.00 6.20 0.236 6.40 6.60 0.251 4.40 4.60 0.173 9.35 10.10 0.368 0.80 0.031 0.60 1.00 0.023 0° 8° 0° TYPE MARKING T8 T810-400B 1040 T8 T810-600B 1060 T8 T835-400B 3540 T8 T835-600B 3560 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.039 8° 5/5 ...