T810-400B STMICROELECTRONICS [STMicroelectronics], T810-400B Datasheet - Page 3

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T810-400B

Manufacturer Part Number
T810-400B
Description
HIGH PERFORMANCE TRIACS
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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Fig 1a: Maximum power dissipation versus RMS
on-state current (T810 only).
Fig 2: Correlation between maximum power dissi-
pation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink+contact.
Fig 4: Relative variation of thermal impedance
junction to case versus pulse duration.
10
10
1.0
0.5
0.2
0.1
8
6
4
2
0
8
6
4
2
0
1E-3
0
0
P(W)
P(W)
K=[Zth(j-c)/Rth(j-c)]
Rth=15 °C/W
1
25
Rth=10 °C/W
2
1E-2
50
Tamb(°C)
3
tp(s)
I
T(RMS)
4
Rth=5°C/W
75
(A)
1E-1
5
Rth=0°C/W
100
Tcase (°C)
6
125
7
180°
1E+0
125
110
115
120
8
Fig 1b: Maximum power dissipation versus RMS
on-state current. (T835 only)
Fig 3: RMS on-state current versus ambient tem-
perature.
Fig 5: Relative variation of gate trigger current and
holding current versus junction temperature (typi-
cal values).
10
9
8
7
6
5
4
3
2
1
0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
0
I
-40
0
T(RMS)
P(W)
I
GT H
,I [Tj]/I
-20
(A)
1
Tamb(°C)
25
I
I
H
GT H
GT
0
2
,I [Tj=25°C]
T810-xxxB / T835-xxxB
20
Tj(°C)
50
3
40
I
T(RMS)
4
60
75
(A)
5
80
100 120 140
6
100
3/5
7
180°
125
8

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