T810H-6T-TR STMICROELECTRONICS [STMicroelectronics], T810H-6T-TR Datasheet - Page 4

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T810H-6T-TR

Manufacturer Part Number
T810H-6T-TR
Description
High temperature 8 A sensitive TRIACs
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Characteristics
4/10
Figure 3.
Figure 5.
Figure 7.
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80
70
60
50
40
30
20
10
2.5
2.0
1.5
1.0
0.5
0.0
0
-50
1
0
V GT Q1- Q2 -Q3
-25
T
Repetitive
C
=135 °C
25
On-state rms current versus
ambient temperature (free air
convection, full cycle)
Relative variation of gate trigger
current and voltage versus junction
temperature (typical values)
I GT Q3
Surge peak on-state current
versus number of cycles
0
I GT Q1- Q2
10
50
T
Non repetitive
j
initial=25 °C
25
Number of cycles
T
T
j
(°C)
a
75
50
(°C)
75
100
100
100
t=20ms
One cycle
125
125
Doc ID 15714 Rev 1
1000
150
150
Figure 4.
Figure 6.
Figure 8.
1.E+00
1000
1.E-01
1.E-02
1.E-03
2.0
1.5
1.0
0.5
0.0
100
10
-50
1
0.01
1.E-03
Sinusoidal pulse width t p < 10 ms
I L
-25
dI/dt limitation: 50 A/µs
1.E-02
Relative variation of thermal
impedance, versus pulse duration
Relative variation of holding and
latching current versus junction
temperature (typical values)
Non-repetitive surge peak on-state
current and corresponding value
of I
Zth(j-c)
I H
0
2
t
1.E-01
0.10
Zth(j-a)
25
T
1.E+00
j
(°C)
50
tp(s)
75
1.E+01
1.00
100
1.E+02
T
I²t
j
initial=25 °C
I
TSM
125
t
P
(ms)
T810H
1.E+03
10.00
150

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