79LV2040RPFE-20 MAXWELL [Maxwell Technologies], 79LV2040RPFE-20 Datasheet

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79LV2040RPFE-20

Manufacturer Part Number
79LV2040RPFE-20
Description
20 Megabit (512K x 40-Bit) Low Voltage EEPROM MCM
Manufacturer
MAXWELL [Maxwell Technologies]
Datasheet
F
• 512k x 40-bit EEPROM MCM
• R
• space radiation
• Total dose hardness:
• Excellent Single event effects
• High endurance
• Page Write Mode: 128 Dword Page
• High Speed:
• Automatic programming
• Low power dissipation
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
EATURES
- >100 krad (Si)
- Dependent upon orbit
- SEL
- SEU > 37 MeV/mg/cm
- SEU = 11.4 MeV/mg/cm
- 10,000 cycles (Page Programming Mode)
- 10 year data retention
- 200 and 250 ns maximum access times
- 15 ms automatic Page/Dword write
- 100 mW/MHz active current
- 1.5 mW standby current
AD
-P
TH
AK
® radiation-hardened against natural
> 84 MeV/mg/cm
:
2
read mode
2
2
write mode
09.07.05 Rev 1
D
Maxwell Technologies’ 79LV2040 multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose toler-
ance, dependent upon orbit. Using Maxwell Technologies’ pat-
ented
technology, the 79LV2040 is the first radiation-hardened 8
megabit MCM EEPROM for space application. The 79LV2040
uses twenty 1 Megabit high speed CMOS die to yield a 20
megabit product. The 79LV2040 is capable of in-system elec-
trical byte and page programmability. It has a 128 x 40 page
programming function to make the erase and write operations
faster. It also features Data Polling and a Ready/Busy signal to
indicate the completion of erase and programming operations.
In the 79LV2040, hardware data protection is provided with
the RES pin, in addition to noise protection on the WE signal
and write inhibit on power on and off. Software data protection
is implemented using the JEDEC optional standard algorithm.
Maxwell Technologies' patented R
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell Technologies self-defined Class
K
20 Megabit (512K x 40-Bit) Low
ESCRIPTION
Low Voltage EEPROM MCM
radiation-hardened
All data sheets are subject to change without notice
Logic Diagram
:
AD
-P
R
AD
AK
AD
-P
provides greater than 100
-P
AK
79LV2040
AK
©2005 Maxwell Technologies
®
® packaging technol-
MCM
All rights reserved.
packaging
1

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79LV2040RPFE-20 Summary of contents

Page 1

F : EATURES • 512k x 40-bit EEPROM MCM • ® radiation-hardened against natural AD AK • space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects - SEL ...

Page 2

Megabit (512K x 40-Bit) EEPROM MCM PINOUT DESCRIPTION 1, 11, 21, 30, 40, 50, VSS - Ground 51, 61, 71, 80, 90, 100 2, 12, 22, 29, 39, 49, VCC - Positive Supply 52, 62, 72, 79, 89, 99 ...

Page 3

Megabit (512K x 40-Bit) EEPROM MCM T 1. 79LV2040 A ABLE P ARAMETER Supply Voltage Input Voltage Package Weight Operating Temperature Range Storage Temperature Range 1. V min = -3.0V for pulse width <50ns 79LV2040 R ...

Page 4

Megabit (512K x 40-Bit) EEPROM MCM T P ARAMETER Input Capacitance : Output Capacitance OUT 1. Guaranteed by design 79LV2040 DC E ABLE ARAMETER EST ...

Page 5

Megabit (512K x 40-Bit) EEPROM MCM T 6. 79LV2040 AC E ABLE P ARAMETER Address Access Time -200 -250 Chip Enable Access Time ...

Page 6

Megabit (512K x 40-Bit) EEPROM MCM T 7. 79LV2040 AC E ABLE P ARAMETER Write Pulse Width CE controlled -200 -250 WE controlled -200 -250 Address Hold Time -200 -250 Data Setup Time -200 -250 Data Hold Time -200 ...

Page 7

Megabit (512K x 40-Bit) EEPROM MCM T 7. 79LV2040 AC E ABLE P ARAMETER Time to Device Busy -200 -250 Write Start Time 3 -200 -250 RES to Write Setup Time 4 -200 -250 V to RES Setup Time ...

Page 8

Megabit (512K x 40-Bit) EEPROM MCM IGURE YTE IGURE EAD IMING AVEFORM (1) (WE C RITE IMING AVEFORM All data sheets are subject to change without notice 09.07.05 ...

Page 9

Megabit (512K x 40-Bit) EEPROM MCM IGURE YTE IGURE AGE 1) A7-A16 are Page Addresses and must be the same within a Page Write Operation (2) (CE C RITE IMING ...

Page 10

Megabit (512K x 40-Bit) EEPROM MCM IGURE AGE 1 1) A7-A16 are Page Addresses and must be the same within a Page Write Operation. F IGURE 1 I 15, 23 ITS ...

Page 11

Megabit (512K x 40-Bit) EEPROM MCM IGURE OFTWARE ATA IGURE OFTWARE ATA EEPROM A N PPLICATION OTES This application note describes the programming procedures for the EEPROM modules and with details ...

Page 12

Megabit (512K x 40-Bit) EEPROM MCM Data Polling Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data ...

Page 13

Megabit (512K x 40-Bit) EEPROM MCM 2. Data Protection at V on/off CC When V is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to CC programming ...

Page 14

Megabit (512K x 40-Bit) EEPROM MCM 5. Writing to the Memory with Software Data Protection Enabled To write to the device once Software protection is enabled, the enable sequence must precede the data to be written. This sequence allows ...

Page 15

Megabit (512K x 40-Bit) EEPROM MCM 100 P S YMBOL TACKED LAT ACKAGE D IMENSION .400 .448 .006 ...

Page 16

Megabit (512K x 40-Bit) EEPROM MCM Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within ...

Page 17

Megabit (512K x 40-Bit) EEPROM MCM Product Ordering Options Model Number 79C0832 -XX 79LV2040 1) Products are manufactured and screened to Maxwell Technologies self-defined Class H and Class K flows. Option Details Feature Access Time 20 ...

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