IDT71216S12PF Integrated Device Technology, IDT71216S12PF Datasheet - Page 8

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IDT71216S12PF

Manufacturer Part Number
IDT71216S12PF
Description
BiCMOS StaticRAM 240K (16K x 15-BIT) CACHE-TAG RAM For PowerPCO and RISC Processors
Manufacturer
Integrated Device Technology
Datasheet
IDT71216
BiCMOS 16K x 15 CACHE-TAG RAM
AC ELECTRICAL CHARACTERISTICS
(V
Write Cycle and Clock Parameters
NOTES:
1. All Write cycles are synchronous and referenced from rising CLK.
2. This parameter is measured as a HIGH time above 2.0V and a LOW time below 0.8V.
3. This parameter is guaranteed with the AC Load (Figure 3) by device characterization, but is not production tested.
4. Addresses are stable prior to CLK transition HIGH.
Symbol
CC
t
t
t
t
t
t
t
t
CKLZ
CH
CL
CSV
CSH
CTV
WHPL
PUWL
t
t
CYC
t
WMI
t
t
t
HA
SA
(2, 3)
S
H
(2, 3)
= 5.0V
(4)
(4)
(3)
(
3)
Clock Cycle Time
Clock Pulse HIGH
Clock Pulse LOW
WET
WET
Address Set-up Time
Address Hold Time
CLK HIGH Write to MATCH and
CLK HIGH Read to Outputs in Low-Z
CLK HIGH Read to Tag Bits Valid
CLK HIGH Write to Status Outputs Valid
Status Output Hold from CLK HIGH Write
WET
PWRDN
5%, V
,
,
and
WES
WES
HIGH to
WES
CCQ
, Chip Select, and Input Data Set-up Time
, Chip Select, and Input Data Hold Time
HIGH to
= 5.0V
WET
Parameter
and
PWRDN
5%
WES
OR
LOW
Active
TA
3.3V
Invalid
0.3V, T
(1)
A
= 0 to 70 C)
14.3
IDT71216S8
Min. Max.
4.5
4.5
1.5
15
50
3
1
3
1
0
5
6
9
8
IDT71216S9
Min. Max.
4.5
4.5
1.5
15
50
3
1
3
1
0
5
10
7
9
COMMERCIAL TEMPERATURE RANGE
IDT71216S10
Min.
4.5
4.5
1.5
15
50
3
1
3
1
0
5
Max.
10
7
9
IDT71216S12
Min. Max. Unit
16.6
1.5
50
5
5
3
1
3
1
0
5
12
10
8
3067 tbl 14
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8

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