S908QC16CDRE FREESCALE [Freescale Semiconductor, Inc], S908QC16CDRE Datasheet - Page 38

• Manufacturer Part Number: S908QC16CDRE
• Description: Microcontrollers
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

Memory
2.6.3 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory to read as a 1:
38
10. After time, t
1. When in monitor mode, with security sequence failed (see
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH address
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE and MASS bits.
8. Wait for a time, t
9. Clear the HVEN bit.
stead of any FLASH address.
Mass erase is disabled whenever any block is protected (FLBPR does not
equal $FF).
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, other unrelated operations may
occur between the steps.
A mass erase will erase the internal oscillator trim value at $FFC0.
RCV
MC68HC908QC16 • MC68HC908QC8 • MC68HC908QC4 Data Sheet, Rev. 2
, the memory can be accessed in read mode again.
NVS
MErase
NVHL
.
.
.
(1)
CAUTION
within the FLASH memory address range.
NOTE
NOTE
18.3.2
Security), write to the FLASH block protect register in-
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