CY7C1019 CYPRESS [Cypress Semiconductor], CY7C1019 Datasheet - Page 4

• Manufacturer Part Number: CY7C1019
• Description: 128K x 8 Static RAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Data Retention Waveform
Data Retention Characteristics
Switching Waveforms
Read Cycle No. 1
Read Cycle No. 2 (OE Controlled)
Notes:
Document #: 38-05055 Rev. **
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CE transition LOW.
9.
V
I
t
t
Parameter
CCDR
CDR
R
DR
DATA OUT
DATA OUT
ADDRESS
CURRENT
ADDRESS
Device is continuously selected. OE, CE = V
SUPPLY
[3]
V
CE
V
CE
OE
CC
CC
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
[9, 10]
for Data Retention
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
PU
Description
t
LZCE
[10, 11]
t
t
LZOE
ACE
IL
.
PRELIMINARY
Over the Operating Range (L Version Only)
t
OHA
50%
t
CDR
t
DOE
3.0V
t
AA
t
RC
DATA RETENTION MODE
No input may exceed V
V
CE
V
CC
IN
1
> V
= V
> V
t
RC
V
CC
DR
DR
CC
– 0.3V or V
> 2V
= 3.0V,
– 0.3V,
Conditions
DATA VALID
IN
CC
< 0.3V
+ 0.5V
t
DATA VALID
HZOE
3.0V
t
R
t
HZCE
Min.
2.0
t
t
RC
PD
0
50%
CY7C1019
Max
300
IMPEDANCE
HIGH
Page 4 of 8
1019–5
1019–6
1019–7
Unit
ns
ns
V
ICC
ISB
A