AD7829 AD [Analog Devices], AD7829 Datasheet - Page 4

• Manufacturer Part Number: AD7829
• Description: 3 V/5 V, 2 MSPS, 8-Bit, 1-, 4-, 8-Channel Sampling ADCs
• Manufacturer: AD [Analog Devices]

CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7822/AD7825/AD7829 features proprietary ESD protection circuitry, perma-
nent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore,
proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
AD7822/AD7825/AD7829
TIMING CHARACTERISTICS
Parameter 5 V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
NOTES
1
2
3
4
ABSOLUTE MAXIMUM RATINGS*
(T
V
V
Analog Input Voltage to AGND
Reference Input Voltage to AGND . . . –0.3 V to V
V
Digital Input Voltage to DGND . . . . . –0.3 V to V
Digital Output Voltage to DGND . . . . –0.3 V to V
Operating Temperature Range
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Plastic DIP Package, Power Dissipation . . . . . . . . . . 450 mW
1
2
3
4
5
6
7
8
9
10
11
12
13
POWER UP
POWER UP
Sample tested to ensure compliance.
See Figures 20, 21, and 22.
Measured with the load circuit of Figure 1 and defined as the time required for an output to cross 0.8 V or 2.4 V with V
an output to cross 0.4 V or 2.0 V with V
Derived from the measured time taken by the data outputs to change 0.5 V when loaded with the circuit of Figure 1. The measured number is then extrapolated back
to remove the effects of charging or discharging the 50 pF capacitor. This means that the time, t
of the part and as such is independent of external bus loading capacitances.
3
DD
DD
MID
A
V
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
θ
Lead Temperature, (Soldering, 10 sec) . . . . . . . . . . . 260°C
4
= 25°C unless otherwise noted)
JA
IN1
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Input Voltage to AGND . . . . . . . –0.3 V to V
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 105°C/W
to V
IN8
420
20
30
110
70
10
0
0
30
10
5
20
10
15
200
25
1
. . . . . . . . . . . . . . . . . . . –0.3 V to V
10%
3 V
420
20
30
110
70
10
0
0
30
20
5
20
10
15
200
25
1
DD
10%
= 3 V ± 10%.
1, 2
Unit
ns max
ns min
ns min
ns max
ns min
ns max
ns min
ns min
ns min
ns max
ns min
ns max
ns min
ns min
ns min
µs typ
µs max
(V
REF IN/OUT
Conditions/Comments
Conversion Time.
Minimum CONVST Pulsewidth.
Minimum time between the rising edge of RD and next falling edge of convert start.
EOC Pulsewidth.
RD rising edge to EOC pulse high.
CS to RD setup time.
CS to RD hold time.
Minimum RD Pulsewidth.
Data access time after RD low.
Bus relinquish time after RD high.
Address setup time before falling edge of RD.
Address hold time after falling edge of RD.
Minimum time between new channel selection and convert start.
Power-up time from rising edge of CONVST using on-chip reference.
Power-up time from rising edge of CONVST using external 2.5 V reference.
DD
DD
DD
DD
DD
= 2.5 V. All specifications –40 C to +85 C unless otherwise noted.)
+ 0.3 V
+ 0.3 V
+ 0.3 V
+ 0.3 V
+ 0.3 V
–4–
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . 450 mW
TSSOP Package, Power Dissipation . . . . . . . . . . . . . 450 mW
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 kV
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
θ
Lead Temperature, Soldering
θ
Lead Temperature, Soldering
JA
JA
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . 215°C
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . 215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 75°C/W
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 128°C/W
10
, quoted in the timing characteristics is the true bus relinquish time
DD
= 5 V ± 10%, and time required for
WARNING!
ESD SENSITIVE DEVICE
REV. B